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Effect of annealing temperatures on the morphology, optical and electrical properties of TiO2 thin films synthesized by the sol–gel method and deposited on Al/TiO2/SiO2/p-Si

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Abstract

Fabrication and characterization of titanium dioxide (TiO2) thin film on Al/TiO2/SiO2/p-Si MIS structure for the study of morphology, optical and electrical properties were reported. A transparent and high crystallinity of TiO2 thin films were prepared at room temperature (~25 °C) by sol–gel route. TiO2 sol suspension were prepared at molar ratio of TTIP:EtOH:AA = 2:15:1 using titanium tetra-isopropoxide (TTIP) and a mixture of absolute ethanol (EtOH) and acetic acid (AA) which used as a precursor and catalyst for the peptization, respectively. The TiO2 thin films were deposited on a thermally grown SiO2 layer of p-type silicon (100) substrates and were thermally treated at different annealing temperatures of 300, 500, 700 and 900 °C. For study of optical properties, the TiO2 thin films were deposited on a glass slides substrate and were annealed from 200 to 700 °C. The XRD results show that the presence of an amorphous TiO2 phases were transformed into the polycrystalline (anatase or rutile) with good crystallinity after treated at higher annealing temperatures. Besides, the surface roughness of TiO2 thin films increased with increasing annealing temperatures. In addition, the resistivity of the thin films decreased from 2.5751E+8 to 6.714E+7 Ω cm with the increasing temperatures. Moreover, the optical absorbance of TiO2 thin films exhibited high UV–visible light absorption with band gap energy shifted to the higher wavelength (low energy photons). The band gap energy (Eg) of the films decreased from 3.79 to 3.16 eV and from 3.95 to 3.75 eV significantly for direct band allowed and indirect band allowed, respectively, with the increasing annealing temperatures.

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Acknowledgments

This research is supported by University of Malaya Research Grant (UMRG: CG003-2013). The authors would like to express their deepest appreciation especially to Prof. Dr. Uda bin Hashim for his guidance and knowledge shared in the completion of this research and to all members Institute of Nano Electronic Engineering (INEE)) and School of Microelectronic Engineering (SoME), UniMAP. The authors would also like to thank Mr Hasrul and Mrs Mira for providing the technical assistance.

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Authors and Affiliations

  1. Nanostructure Lab-on-chip Research Group, Institute of Nano Electronic Engineering, Universiti Malaysia Perlis, 01000, Kangar, Perlis, Malaysia

    A. K. M. Muaz, U. Hashim & Wei-Wen Liu

  2. Departments of Biomedical Engineering, University of Malaya, 50603, Kuala Lumpur, Malaysia

    A. K. M. Muaz, Fatimah Ibrahim, K. L. Thong & Mas S. Mohktar

  3. School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600, Arau, Perlis, Malaysia

    U. Hashim

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  1. A. K. M. Muaz
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Muaz, A.K.M., Hashim, U., Ibrahim, F. et al. Effect of annealing temperatures on the morphology, optical and electrical properties of TiO2 thin films synthesized by the sol–gel method and deposited on Al/TiO2/SiO2/p-Si. Microsyst Technol 22, 871–881 (2016). https://doi.org/10.1007/s00542-015-2514-7

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