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Analysis of novel transparent gate recessed channel (TGRC) MOSFET for improved analog behaviour

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Abstract

In this paper, a novel device structure called transparent gate recessed channel MOSFET (TGRC-MOSFET) is proposed to alleviate the hot carrier effects for the advanced nanometer process. TGRC-MOSFET involving a recessed channel and incorporates indium tin oxide as a transparent gate. TCAD analysis shows that the performance of TGRC-MOSFET surpasses conventional recessed channel (CRC)-MOSFET in terms of high ION/IOFF ratio and better carrier transport efficiency in comparison to CRC-MOSFET. This simulation divulges the reduction in hot-carrier-effects metrics like electron velocity, electron temperature, potential, and electron mobility. Furthermore, the effect of gate length is observed on the analog behavior of TGRC-MOSFET. All the simulations have been done using DEVEDIT-3D and ATLAS device simulator. The work proposes the novel design for reduced hot carrier and low power switching applications.

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Acknowledgments

The authors would like to gratitude to Microelectronics Research Lab, Department of Engineering Physics, Delhi Technological University to carry out this work.

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Authors and Affiliations

  1. Microelectronics Research Lab, Department of Engineering Physics, Delhi Technological University, Bawana Road, Delhi, 110042, India

    Ajay Kumar, Neha Gupta & Rishu Chaujar

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  1. Ajay Kumar
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  2. Neha Gupta
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  3. Rishu Chaujar
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Correspondence to Rishu Chaujar.

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Kumar, A., Gupta, N. & Chaujar, R. Analysis of novel transparent gate recessed channel (TGRC) MOSFET for improved analog behaviour. Microsyst Technol 22, 2665–2671 (2016). https://doi.org/10.1007/s00542-015-2554-z

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  • DOI: https://doi.org/10.1007/s00542-015-2554-z

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