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Low temperature epoxy bonding for RF MEMS capacitive switch

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Abstract

Packaging is one of the most critical tasks for MEMS devices. Unlike solid state devices, MEMS structures involves moving structures which needs to be protected from outer environment ensuring free movement of the structure. In the present paper, inverted silicon cavity is used for capping the MEMS devices. However, in case of RF MEMS, silicon cavity would add parasitics and affects its electrical performance. Enclosing the MEMS structure, its mechanical response will also alter. The electrical as well as mechanical characteristics of the RF MEMS switch are analyzed using finite element method simulations. The electrical response of the fabricated switch after packaging is compared with unpackaged device.

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Acknowledgements

Author would like to thank Council of Scientific and Industrial Research (CSIR), India for providing financial assistance throughout the project MLP-105 and providing CSIR-SRF Fellowship.

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Authors and Affiliations

  1. CSIR-Central Electronics Engineering Research Institute, Pilani, 333031, India

    Anuroop, Deepak Bansal, Prem Kumar, Amit Kumar,  Khushbu & Kamaljit Rangra

  2. Academy of Scientific and Innovative Research (AcSIR), CSIR-CEERI Campus, Pilani, 333031, India

    Anuroop, Deepak Bansal, Amit Kumar,  Khushbu & Kamaljit Rangra

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  1. Anuroop
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  2. Deepak Bansal
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  3. Prem Kumar
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  4. Amit Kumar
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  5. Khushbu
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  6. Kamaljit Rangra
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Correspondence to Anuroop.

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Author is very thankful for the Council of Scientific and Industrial Research (CSIR), India for providing funds through MLP-105 and CSIR-SRF Fellowship.

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Anuroop, Bansal, D., Kumar, P. et al. Low temperature epoxy bonding for RF MEMS capacitive switch. Microsyst Technol 25, 3047–3051 (2019). https://doi.org/10.1007/s00542-018-4186-6

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  • DOI: https://doi.org/10.1007/s00542-018-4186-6

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