Abstract
Fifth generation (5G) communication system enables the pathway for a higher data transfer rate. The frequency bands used for 5G communication system are distributed from lower frequency range (600 MHz) to a higher frequency range (60 GHz). So it is necessary that a single switch should be able to cover the complete range of 5G frequency bands. The ohmic radio frequency-micro electromechanical system (RF-MEMS) switch has offered high isolation at lower frequencies (> 40 dB up to 2.5 GHz). However, 5G requires a higher frequency range which is covered by capacitive switch. The capacitive switch has limitations of limited bandwidth and large size. In this paper, a hybrid technique is used for the designing of a compact, high isolation and the enhanced bandwidth SPDT RF MEMS switch for 5G applications. The size of the proposed switch is half from the conventional capacitive RF MEMS switch and offer greater than 40 dB isolation over a wide frequency range (> 40 dB over 22.10 GHz bandwidth) with less than 0.30 dB insertion loss over the entire band.
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Acknowledgements
Author would like to thank Council of Scientific and Industrial Research (CSIR), India for providing financial assistance throughout the project MLP-105 and providing CSIR-SRF Fellowship.
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Anuroop, Bansal, D., Kumar, P. et al. Compact high isolation and improved bandwidth hybrid RF MEMS SPDT switch for 5G applications. Microsyst Technol 25, 3129–3136 (2019). https://doi.org/10.1007/s00542-019-04343-0
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DOI: https://doi.org/10.1007/s00542-019-04343-0