Deposition and Characterization of Metastable Cu₃N Layers for Applications in Optical Data Storage

Abstract.

 Cu₃N films for optical data storage were deposited on Si(100) wafers and 0.6 mm thick polycarbonate DVD base material discs at a temperature of 50 °C by reactive magnetron sputtering. A copper target was sputtered in rf mode in a nitrogen plasma. For basic investigations concerning the composition and structure of Cu₃N, Si wafers were used as substrate material. To study the suitability of Cu₃N as an optical data storage medium under technical conditions, Cu₃N/Al bilayers were deposited on polycarbonate discs. The composition and structure of the films were investigated by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD).

The decomposition of Cu₃N into metallic copper and nitrogen was induced and characterized with a dynamic tester consisting of an optical microscope with an integrated high power laser diode. The change in reflectivity induced by the laser pulses was measured by a high sensitivity photo detector. Optimized Cu₃N films could be decomposed into metallic copper at pulse lengths of 200 ns. The reflectivity change from 3.2% to 33.2% for completely transformed areas and to 12% for single bits as well as the maximum write data rate of 3.3 Mbit/s demonstrated the suitability of Cu₃N for write once optical data storage. Especially the carrier to noise ratio of 41 dB shows an increase of a factor of 3 for this novel material as compared to conventional optical data storage media.