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Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices

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Abstract

A reliable driving scheme that can compensate for the inherent instability of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is essential for implementation of large-area devices including displays and sensor arrays for bio-imaging applications. In particular, for high precision and high-resolution devices, the technique should be accurate and fast. A new driving scheme is presented that enables control of the DC and transient shift in the threshold voltage (V T ) and gate voltage of drive/amplifier TFT, while fulfilling the timing requirements for the different applications. The transient shift in the gate voltage has been known to contribute as much as 10% error in controlling the DC shift in the V T whereas it is less than 0.5% for the driving scheme presented here.

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Authors and Affiliations

  1. Electrical and Computer Department, University of Waterloo, 200 University Avenue, Waterloo, ON, Canada, N2L3G1

    G. Reza Chaji & Nader Safavian

  2. London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH, UK

    Arokia Nathan

Authors
  1. G. Reza Chaji
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  2. Nader Safavian
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  3. Arokia Nathan
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Correspondence to G. Reza Chaji.

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Chaji, G.R., Safavian, N. & Nathan, A. Compensation technique for DC and transient instability of thin film transistor circuits for large-area devices. Analog Integr Circ Sig Process 56, 143–151 (2008). https://doi.org/10.1007/s10470-007-9082-4

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  • DOI: https://doi.org/10.1007/s10470-007-9082-4

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