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Area-efficient CMOS transimpedance amplifier for optical receivers

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Abstract

In this letter, a broadband area-efficient transimpedance amplifier (TIA) for optical receivers is designed using a standard 0.18 μm CMOS technology. A new shunt–shunt peaking technique is used at the input transimpedance stage, which is followed by a gain stage and a capacitive degeneration stage. The amplifier achieves a wide bandwidth with only one inductor; hence a smaller silicon area is maintained. The proposed TIA has a measured transimpedance gain of 50 dB Ohm and a −3 dB bandwidth of 6.5 GHz for 0.25 pF input photodiode capacitance. It consumes DC power of 14 mW from a 1.8 V supply voltage and occupies only 0.09 mm2 silicon area.

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References

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Authors and Affiliations

  1. Institute of VLSI Design, Zhejiang University, Yu Quan, Hangzhou, 310027, China

    S. M. Han, G. Sun, F. Jiang, Xiao-Peng Yu & X. B. Wu

Authors
  1. S. M. Han
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  2. G. Sun
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  3. F. Jiang
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  4. Xiao-Peng Yu
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  5. X. B. Wu
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Corresponding author

Correspondence to Xiao-Peng Yu.

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Han, S.M., Sun, G., Jiang, F. et al. Area-efficient CMOS transimpedance amplifier for optical receivers. Analog Integr Circ Sig Process 58, 67–70 (2009). https://doi.org/10.1007/s10470-008-9221-6

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  • DOI: https://doi.org/10.1007/s10470-008-9221-6

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