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A low-voltage low-power 0.25 µm integrated single transistor active inductor-based filter

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Abstract

In this paper we present a 0.25 µm BiCMOS Technology bandpass filter implementation based on a single transistor Active Inductor (AI). The high-Q AI integrated circuit is designed by the use of a single transistor with a compensation network that allows to control both the inductance and its series resistance value. The AI-based high frequency bandpass filter has a center frequency of 2000 MHz (useful for radio and radar applications) and a 3 dB bandwidth of about 6 MHz with a quality factor of about 330. Moreover, a discrete prototype of the same AI has been also designed and measured. Measurements results on the discrete board have shown a 3 dB bandwidth of about 10 MHz, a noise figure of 6 dB, a −10 dBm P1 dB compression point with 80 dB dynamic range. The power supply is 1.2 V with a power consumption of 800 µW showing low-voltage low-power operation capability together with good general performances.

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Authors and Affiliations

  1. Department of Industrial and Information Engineering and Economics, University of L’Aquila, 67100, L’Aquila, Italy

    L. Pantoli, V. Stornelli & G. Leuzzi

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  1. L. Pantoli
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  2. V. Stornelli
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  3. G. Leuzzi
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Correspondence to V. Stornelli.

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Pantoli, L., Stornelli, V. & Leuzzi, G. A low-voltage low-power 0.25 µm integrated single transistor active inductor-based filter. Analog Integr Circ Sig Process 87, 463–469 (2016). https://doi.org/10.1007/s10470-016-0727-z

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  • DOI: https://doi.org/10.1007/s10470-016-0727-z

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