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On g m-boosted follower-amplifier and its novel circuit transformation based mid-band derivations

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Abstract

This brief paper investigates the small-signal mid-band behavior of g m-boosted follower-amplifiers which has not been explored previously and whose analysis is not available in text-books or any other source. Both g m-boosted source follower and g m-boosted emitter follower are considered in the mid-band analysis. A novel circuit/source transformation based “pictorial” technique with progressively simplified circuit diagrams is employed for this mid-band analysis which generally eliminates the need for solving nodal or mesh equations. Final expression is often achieved by inspection of the simplified circuit without the need for circuit analysis. The paper also discusses g m-boosted BiCMOS follower amplifier using substrate PNP device in a pure CMOS process. The analysis demonstrates that the unity gain accuracy of follower-amplifier can be considerably enhanced using the g m-boosting technique without sacrificing bandwidth.

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Authors and Affiliations

  1. Center for Research in Analog and VLSI Microsystem dEsign (CRAVE), School of Engineering and Advanced Technology, Massey University, Albany, Auckland, 0632, New Zealand

    S. M. Rezaul Hasan

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  1. S. M. Rezaul Hasan
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Correspondence to S. M. Rezaul Hasan.

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Rezaul Hasan, S.M. On g m-boosted follower-amplifier and its novel circuit transformation based mid-band derivations. Analog Integr Circ Sig Process 93, 107–114 (2017). https://doi.org/10.1007/s10470-017-0995-2

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  • DOI: https://doi.org/10.1007/s10470-017-0995-2

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