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A 0.9-V supply, 16.2 nW, fully MOSFET resistorless bandgap reference using sub-threshold operation

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Abstract

A nano-watt bandgap voltage reference (BGR) is presented. To provide a low-voltage and low-power BGR, the circuit has been biased in the sub-threshold region; thereby, drawing a few nano-amperes current from the source, has been achieved. In order to reduce die area and also power consumption, instead of resistor, transistor is used. To generate PTAT voltage, self-cascode composite structure is used for the transistors. The results from post-layout simulation using 0.18-μm standard CMOS technology show that the proposed BGR circuit generates a reference voltage of 625 mV, obtaining temperature coefficient of 13 ppm/ °C in the temperature range of − 25 °C to 110 °C. The simulated power supply rejection ratio is 42 dB. Fully designed with MOS transistors, the circuit draws 18 nA from a 0.9-V supply. The active area of the proposed BGR is 0.00067 mm2.

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Authors and Affiliations

  1. Research Laboratory for High Frequency Circuits and Systems, Faculty of Electrical Engineering, K. N. Toosi University of Technology, Shari’ati Street, Seyyed Khandan Bridge, Tehran, 1431714191, Iran

    Iman Fakharyan, Mehdi Ehsanian & Hadi Hayati

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  1. Iman Fakharyan
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  2. Mehdi Ehsanian
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  3. Hadi Hayati
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Correspondence to Iman Fakharyan.

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Fakharyan, I., Ehsanian, M. & Hayati, H. A 0.9-V supply, 16.2 nW, fully MOSFET resistorless bandgap reference using sub-threshold operation. Analog Integr Circ Sig Process 103, 367–374 (2020). https://doi.org/10.1007/s10470-019-01521-y

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