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Modeling and design of an ultra low-power NEMS relays: application to logic gate inverters

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Abstract

In this work we propose a design based on a nanoelectromechanical relay acting as a logic gate inverter. The proposed inverter is made of a double cantilever nanobeam actuated by a fixed central electrode carrying the input signals. The static and dynamic behaviors of the ohmic nanoinverter gate are investigated using an electromechanical mathematical model that fully incorporates nonlinear form of the electrostatic force and the ohmic contact of the nanobeams’ tip with the fixed output electrode. The derived electromechanical model is used for electrical and energy analysis. Simulations are used to confirm the functionality of the inverter. The analysis of the switching energy showed very low power consumption compared to classical CMOS inverters. It is shown that the proposed inverter dissipates only 0.45 fJ to code a “1” logic-state and 0.023 fJ to code a “0” logic-state.

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Authors and Affiliations

  1. Applied Mechanics and Systems Research Laboratory (LR03ES06), Tunisia Polytechnic School, University of Carthage, BP 743, 2078, La Marsa, Tunisia

    Hatem Samaali & Fehmi Najar

  2. ISTIC, University of Carthage, Technopole de Borj Cedria, Route de Soliman, BP 123, 1164, Hammam Chatt, Tunisia

    Hatem Samaali

  3. Micro Nano Sciences and Systems Department, FEMTO-ST, 15B avenue des Montboucons, 25030, Besançon, France

    Amar Chaalane

  4. Physics Department, Badji Mokhtar University of Annaba, BP 12, 23000, Annaba, Algeria

    Amar Chaalane

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  1. Hatem Samaali
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  2. Fehmi Najar
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Correspondence to Fehmi Najar.

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Samaali, H., Najar, F. & Chaalane, A. Modeling and design of an ultra low-power NEMS relays: application to logic gate inverters. Analog Integr Circ Sig Process 104, 17–26 (2020). https://doi.org/10.1007/s10470-020-01658-1

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  • DOI: https://doi.org/10.1007/s10470-020-01658-1

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