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Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors

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Abstract

The authors have developed a quantum corrected drift-diffusion model for impact avalanche transit time (IMPATT) devices by coupling the density gradient model with the classical drift-diffusion model. A large-signal simulation technique has been developed by incorporating the quantum potentials in the current density equations for the analysis of double-drift region IMPATT devices based on different semiconductors such as Wurtzite–GaN, InP, type-IIb diamond (C), 4H–SiC and Si deigned to operate at different millimeter-wave (mm-wave) and terahertz (THz) frequencies. It is observed that, the RF power output and DC to RF conversion efficiency of the devices operating at higher mm-wave (\(>\)140 GHz) and THz frequencies reduce due to the incorporation of quantum corrections in the model; but the effect of quantum corrections are negligible for the devices operating at lower mm-wave frequencies (\(\le \)140 GHz).

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Acknowledgments

The senior most author, Professor (Dr.) J. P. Banerjee (same as J. P. Bandyopadhyay) is grateful to the University Grants Commission, India for supporting the research through the award of an Emeritus Fellowship in the Institute of Radio Physics and Electronics, University of Calcutta.

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Authors and Affiliations

  1. Supreme Knowledge Foundation Group of Institutions, Mankundu, Hooghly, 712139, West Bengal, India

    Aritra Acharyya

  2. Techno India Banipur, Banipur College Road, Banipur, 743233, West Bengal, India

    Jayabrata Goswami

  3. Academy of Technology, West Bengal University of Technology, Adisaptagram, Hooghly, 712121, West Bengal, India

    Suranjana Banerjee

  4. Institute of Radio Physics and Electronics, University of Calcutta, 92, APC Road, Kolkata, 700009, India

    J. P. Banerjee

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  1. Aritra Acharyya
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  4. J. P. Banerjee
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Correspondence to Aritra Acharyya.

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Acharyya, A., Goswami, J., Banerjee, S. et al. Quantum corrected drift-diffusion model for terahertz IMPATTs based on different semiconductors. J Comput Electron 14, 309–320 (2015). https://doi.org/10.1007/s10825-014-0658-9

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