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An investigation of a suppressed-drain cylindrical gate-all-around retrograde-doped heterospacer steep-density-film tunneling field-effect transistor

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Abstract

The effect of retrograde doping with a high-density layer on the performance of a cylindrical (cyl.) gate-all-around (GAA) tunneling field-effect transistor (TFET) has been investigated. The proposed device design incorporates retrograde doping (RD) along with a heterospacer (HeTS) on a silicon-germanium substrate. The proposed device also includes a suppressed drain (SD) and steep density film (SDF) to achieve the optimal ON-current (ION) but suppressed OFF-current (IOFF) across the drain tunneling junctions. Since a high gate potential results in band bending in the source and drain regions due to the fringing fields, the heterospacer dielectric causes steep energy-band bending on the source side, leading to a high current drivability. Furthermore, to mitigate reliability issues, the trap charges are analyzed. Enhanced switching and radiofrequency (RF) characteristics are achieved when retrograde doping is incorporated with a steep density film. The device design and simulation are performed using Synopsys three-dimensional (3D) technology computer-aided design (TCAD) software. Direct-current (DC) and transient characteristics such as IOFF, ION, the gate–source capacitance (Cgs), the gate–drain capacitance (Cgd), the transconductance (gm), the electric field intensity, and the average subthreshold swing (SSavg) are analyzed for the three proposed structures. The simulation results reveal that that the SD GAA RD HeTS SDF TFET exhibits enhanced performance compared with other device structures, showing a high ION of 1.64 × 10–5 A/µm, a diminished IOFF of 3.48 × 10–18 A/µm, a gm of 57 µS/µm at Vgs = 0.6 V, and the steepest subthreshold slope (SS) of 29 mV/decade, but without degradation of the current drivability.

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Acknowledgements

The authors thank VIT Bhopal University and the Nanoscale Devices, VLSI Circuit, and System Design Research Group of IIT Indore, Indore for technical support.

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Authors and Affiliations

  1. School of Electrical and Electronics Engineering (SEEE), VIT Bhopal University, Bhopal, 466114, India

    Sanjana Tiwari, Arya Dutt, Mayuresh Joshi, Prakhar Nigam, Ribu Mathew & Ankur Beohar

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  1. Sanjana Tiwari
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  2. Arya Dutt
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  3. Mayuresh Joshi
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  4. Prakhar Nigam
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  5. Ribu Mathew
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  6. Ankur Beohar
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Correspondence to Ankur Beohar.

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Tiwari, S., Dutt, A., Joshi, M. et al. An investigation of a suppressed-drain cylindrical gate-all-around retrograde-doped heterospacer steep-density-film tunneling field-effect transistor. J Comput Electron 20, 1702–1710 (2021). https://doi.org/10.1007/s10825-021-01741-4

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