Abstract
Amorphous indium oxide (In2O3) and 10-wt% SnO2 doped In2O3 (ITO) thin films were prepared by pulsed-laser deposition. These films were crystallized upon heating in vacuum at an effective heating rate of 0.00847 °C/s, while the evolution of the structure was observed by in situ X-ray diffraction measurements. Fast crystallization of the films is observed in the temperature ranges 165–210 °C and 185–230 °C for the In2O3 and ITO films, respectively. The crystallization kinetics is described by a reaction equation, with activation energies of 2.31 ± 0.06 eV and 2.41 eV and order of reactions of 0.75 ± 0.07 and 0.75 for the In2O3 and ITO films, respectively. The structures of the films observed here during heating are compared with those obtained upon film growth at different temperatures. The resistivity of the films depends on the evolution of the structure, the oxygen content and the activation of tin dopants in the films. A low resistivity of 5.5 × 10−4 Ω cm was obtained for the In2O3 and ITO films at room temperature, after annealing to 250 °C the resistivity of the ITO film reduces to 1.2 × 10−4 Ω cm.
Similar content being viewed by others
References
Granqvist CG, (2000) Solar Energy Mater Solar Cells 60:201
Adurodija FO (2001) In: Nalwa HS (ed) Handbook of thin films: deposition and processing of films, vol 1. Academic Press, New York, p 161
Ellmer K, Mientus R, Weiß V, Rossner H (2003) Meas Sci Technol 14:336
Diniz ASAC, Keily CJ (2004) Renewable Energy 29:2037
Ow-Yang CW, Springer D, Shigesato Y, Paine DC (1998) J Appl Phys 88:145
Rogozin A, Shevchenko N, Vinnichenko M, Prokert F, Cantelli V (2004) Appl Phys Lett 85:212
Morikawa H, Fujita M (2000) Thin Solid Films 359:61
Wulff H, Quaas M, Steffen H, Hippler R (2000) Thin Solid Films 377–378:418
Morikawa H, Sumi H, Kohyama M (1996) Thin Solid Films 281–282:202
Paine DC, Whitson T, Janiac D, Beresford R, Ow-Yang CW (1999) J Appl Phys 85:8445
Muranaka S, Bando Y, Tanaka T (1987) Thin Solid Films 25:35
Muranaka S (1991) Jpn J Appl Phys 30:L2062
De Beardemaeker J, Dauwe C, Deduytsche D, Detavernier C, Egger W, Sperr P (2004) Mater Sci Forum 445–446:69
Song PK, Shigesato Y, Yasui I, Ow-Yang CW, Paine DC (1998) Jpn J Appl Phys 37:1870
Oyama T, Hashimoto N, Shimazu J, Akao Y, Kojima H, Aikawa K, Suzuki K (1992) J Vac Sci Technol A 10:1682
Sun XW, Huang HC, Kwok HS (1996) Appl Phys Lett 68:2663
Thornton JA, Hoffman WD (1989) Thin Solid Films 171:5
Bardos L, Libra M (1989) Vacuum 39:33
Bender M, Katsarakis N, Gagaoudakis E, Hourdakis E, Douloufakis E, Cimalla V, Kiriakidis G (2001) J Appl Phys 90:5382
Bertaut E (1968) In: International tables for x-ray crystallography, vol 3. Kynoch Press, Birmingham, p 318
Zhao L, Steinhart M, Yosef M, Lee SK, Geppert T, Pippel E, Scholz R, Gosele U, Schecht S (2005) Chem Mater 17:3
Tahar RBH, Ban T, Ohya Y, Takahashi Y (1998) J Appl Phys 83:2631
Adurodija FO, Bruning R, Asia IO, H Izumi, Ishihara T, Yoshioka H (2005) Appl Phys A 81:953
Izumi H, Adurodija FO, Kaneyoshi H, Ishihara T, Yoshoika Y, Motoyama M (2002) J Appl Phys 91:1213
Kim H, Gilmore C, Pique A, Horwitz JS, Matoussi H, Murata H, Kafifi ZH, Chrisey DB (1999) J Appl Phys 86:6451
Kwok HS, Sun XW, Kim DH (1998) Thin Solid Films 335:229
Adurodija FO, Izumi H, Ishihara T, Yoshioka Y, Matsui H, Motoyama M (1999) Appl Phys Lett 74:3059
Yu Y, Maree CHM, Haglund RF Jr, Hamilton JD, Morales Paliza MA, Huang MB, Felman LC, Weller RA (1999) J Appl Phys 86:991
Jung YS (2004) Thin Solid Films 467:36
Martino M, Luches A, Fernandez M, Anobile P, Petruzzelli V (2001) J Phys D: Appl Phys 34:2606
Losurdo M, Griangregorio M, Capezzuto P, Bruno G, De Rosa R, Roca F, Summonte C, Pla J, Rizzoli R (2002) J Vac Sci Tech A 20:37
Chen RT, Robinson D (1992) Appl Phys Lett 60:1541
Yeom HY, Popovich N, Chason E, Paine DC (2002) Thin Solid Films 411:17
Acknowledgments
This project is partly sponsored by Atlantic Innovation Fund (AIF) and Natural Science and Engineering Research Council (NSERC).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Adurodija, F.O., Semple, L. & Brüning, R. Crystallization process and electro-optical properties of In2O3 and ITO thin films. J Mater Sci 41, 7096–7102 (2006). https://doi.org/10.1007/s10853-006-0038-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10853-006-0038-3