Abstract
Rutherford Backscattering Spectrometry (RBS) and Electrical Resistivity Measurements (ERM) were used to investigate the mixing of Au/Ge bilayer deposited onto glass substrate induced by Ar ions. Mixing was initiated by bombarding the sample with 400 keV 40Ar+ beam with a fluence up to 1.2 × 1017 ions/cm2 at a constant flux of 0.25 μA/cm2. To assist the evaluation of the experimental results, all spectra were simulated using “RUMP” computer code. RBS results indicated that ion beam mixing led to a formation of AuGe2 compound. The mixed region was noticed to increase with the gradual increase of Ar+ fluence. Results were also compared with current theoretical models used to describe the mixing process. The Bφrgesen thermal spike model was found to accurately predict the diffusion in Au/Ge interface. An increase in the electrical resistivity of the film was detected during Ar+ irradiation.
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Acknowledgement
We are grateful to Messrs. A. Khader, S. Kharabshah, A. Amre and S. Abdul-Rahman at the JOVAC facilities. We also would like to thank Frank D’Agosta for his help during the revision of the manuscript.
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Nawash, J.M., Masoud, N.M., Al-Saleh, K.A. et al. Mixing in Au/Ge system induced by Ar+ ion irradiation. J Mater Sci 42, 7488–7493 (2007). https://doi.org/10.1007/s10853-006-1463-z
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DOI: https://doi.org/10.1007/s10853-006-1463-z