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Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon

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Abstract

The oxidation of silicon is known to inject interstitials, and the presence of silicon–germanium (SiGe) alloys at the Si/SiO2 interface during oxidation is known to suppress the injection of silicon self-interstitials. This study uses a layer of implantation-induced dislocation loops to measure interstitial injection as a function of SiGe layer thickness. The loops were introduced by a 50 keV 2 × 1014 cm−2 P+ room-temperature implantation and thermal annealing. Germanium was subsequently introduced via a second implant at 3 keV Ge+ over a range of doses between 1.7 × 1014 cm−2 and 1.4 × 1015 cm−2. Results show that upon oxidizing at 850 °C for 3 h or 900 °C for 70 min to condense the germanium at the Si/SiO2 interface, where if forms a Si0.5Ge0.5 alloy. Upon subsequent oxidations of 850 °C for 6 h or 900 °C for 2 h, partial suppression of interstitial injection can be observed for sub-monolayer doses of germanium, and more than three monolayers of Si0.5Ge0.5 (1.4 × 1015 cm−2) are necessary to suppress interstitial injection below the detection limit during oxidation. These results show that low-energy implantation of germanium can be used to eliminate or modulate injection of oxidation-induced interstitials.

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Acknowledgements

TEM work was performed at the National High Magnetic Field Laboratory, which is supported by NSF DMR-1157490 and the State of Florida. As well as the University of Florida Research Services Center.

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Author notes

  1. Renata A. Camillo-Castillo

    Present address: Intel Corporation, Hillsboro, OR, USA

Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, Gainesville, FL, 32611, USA

    Thomas P. Martin & K. S. Jones

  2. RF Technology Development, GlobalFoundries 1000 River Road, Essex Junction, VT, 05452, USA

    Renata A. Camillo-Castillo

  3. Applied Materials Varian Semiconductors, Gloucester, MA, 01930, USA

    Christopher Hatem

  4. National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL, 32310, USA

    Yan Xin

  5. Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT, 2601, Australia

    Robert G. Elliman

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  1. Thomas P. Martin
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Correspondence to Thomas P. Martin.

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Martin, T.P., Jones, K.S., Camillo-Castillo, R.A. et al. Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon. J Mater Sci 52, 10387–10392 (2017). https://doi.org/10.1007/s10853-017-1196-1

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  • DOI: https://doi.org/10.1007/s10853-017-1196-1

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