Abstract
CuCl is a wide-direct band gap semiconductor, lattice matched to Si and it possesses excellent ultra violet (UV) emission properties. It is thus a promising candidate for the next generation Si based UV optoelectronics. CuCl films were deposited using RF magnetron sputtering technique. X-ray diffraction analysis reveals that the grains are strongly <111> oriented. Triangular crystallites of CuCl were observed in the AFM surface topograph. Au–CuCl–Si–Au structures were fabricated and field dependent electrical studies were carried out in the electric field range of 1.25 × 106 to 2.5 × 107 V/m. I–V characteristics show that ohmic conduction prevails in low electric fields up to 2.5 × 106 V/m. In the higher field range, from 2.5 × 106 to 2.5 × 107 V/m, the conduction mechanism was Schottky emission controlled. There was no trap related charge transport observed at higher electric fields. Preliminary electrical studies are reported in this article.
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References
W. Chen, M. Dumas, S. Ahsan, A. Kahn, C.B. Duke, A. Patton, J. Vac. Sci. Technol. A. 10, 2071 (1992)
A. Yanase, Y. Segawa, Surf. Sci. 357–358, 885 (1996)
A. Yanase, Y. Segawa, App. Surf. Sci. 130–132, 566 (1998)
E. Vanagas, D. Brinkmann, J. Kudrna, O. Crégut, P. Gilliot, R. Tomasiunas, B. Hönerlage, J. Phys.: Condens. Matter. 14, 3627 (2002)
R.S. Williams, D.K. Shuh, Y. Segawa, J. Vac. Sci. Technol. A. 6, 1950 (1988)
N. Nishida, K. Saiki, A. Koma, Surf. Sci. 324, 149 (1995)
G. Natarajan, S. Daniels, D.C. Cameron, L. O’Reilly, P.J. McNally, O. Lucas, I. Reid, R.T. Rajendra Kumar, A. Mitra, L. Bradley, J. Appl. Phys. 100, 033520 (2006)
G. Natarajan, R.T. Rajendra Kumar, S. Daniels, D.C. Cameron, J. Appl. Phys. 100, 096108 (2006)
L. O’Reilly, O.F. Lucas, P.J. McNally, A. Reader, G. Natarajan, S. Daniels, D.C. Cameron, A. Mitra, M. Martinz-Rosas, A.L. Bradley, J. Appl. Phys. 98, 113512 (2005)
JCPDS Card no. 06-344, (International Centre for Diffraction, New York, 1997)
A. Yanase, Y. Segawa, Surf. Sci. 357–358, 885 (1996)
L. Maissel, R. Glang, Handbook of Thin Film Technology, (McGraw-Hill, New York, 1970)
S. Roberts, Phys. Rev. 76, 1215 (1949)
I.P. Kaminow, E.H. Turner, Phys. Rev. B 5, 1564 (1972)
J.E. Potts, R.C. Hanson, C.T. Walker, C. Schwab, Phys. Rev. B 9, 2711 (1974)
Acknowledgements
This project is funded by the Irish Research Council for Science Engineering and Technology (IRCSET) grant number SC/02/7. The authors would like to thank Mr. Billy Roarty for his technical support.
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Natarajan, G., Rajendra Kumar, R.T., Daniels, S. et al. Electrical studies on sputtered CuCl thin films. J Mater Sci: Mater Electron 19, 103–106 (2008). https://doi.org/10.1007/s10854-007-9310-9
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DOI: https://doi.org/10.1007/s10854-007-9310-9