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Electrical studies on sputtered CuCl thin films

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Abstract

CuCl is a wide-direct band gap semiconductor, lattice matched to Si and it possesses excellent ultra violet (UV) emission properties. It is thus a promising candidate for the next generation Si based UV optoelectronics. CuCl films were deposited using RF magnetron sputtering technique. X-ray diffraction analysis reveals that the grains are strongly <111> oriented. Triangular crystallites of CuCl were observed in the AFM surface topograph. Au–CuCl–Si–Au structures were fabricated and field dependent electrical studies were carried out in the electric field range of 1.25 × 106 to 2.5 × 10V/m. I–V characteristics show that ohmic conduction prevails in low electric fields up to 2.5 × 10V/m. In the higher field range, from 2.5 × 106 to 2.5 × 10V/m, the conduction mechanism was Schottky emission controlled. There was no trap related charge transport observed at higher electric fields. Preliminary electrical studies are reported in this article.

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Acknowledgements

This project is funded by the Irish Research Council for Science Engineering and Technology (IRCSET) grant number SC/02/7. The authors would like to thank Mr. Billy Roarty for his technical support.

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Correspondence to Gomathi Natarajan.

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Natarajan, G., Rajendra Kumar, R.T., Daniels, S. et al. Electrical studies on sputtered CuCl thin films. J Mater Sci: Mater Electron 19, 103–106 (2008). https://doi.org/10.1007/s10854-007-9310-9

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