Abstract
cadmium–zincoxide (CdZnO) interlayered metal–semiconductor structure was examined by capacitance and conductance versus voltage data in dark and under 250 W illumination at 100 kHz, 500 kHz and 1 MHz frequencies, respectively. The effectuality of the frequency, applied voltage, illumination, and series resistance on the electrical parameters was discussed in detail. The increase in the frequency led to the decrement in capacitance and conductance and the increment in the illumination generally led to the increment in capacitance and conductance. An abnormal behavior was detected in the accumulation region of the C–V plots at 500 kHz and 1 MHz due to the inductive phenomenon of device. The effect of illumination intensity reduces the Ri values in the inversion region while enhances them in the depletion and accumulation region for 1 MHz. Additionally, the series resistance values decrease with increasing frequency due to the specific dispersion of localized interface states. As a consequence of the experimental results, a remarkable interaction was realized between the electrical parameters and the illumination, frequency and applied biases.
Similar content being viewed by others
References
S.O. Tan, H. Uslu Tecimer, O. Çiçek, H. Tecimer, İ. Orak, Ş. Altındal, J. Mater. Sci. Mater. Electron. 27, 8340–8347 (2016)
K. Kano, Semiconductor Devices (Prentice-Hall, Upper Saddle River, 1998)
H. Uslu, Ş. Altındal, T. Tunc, İ. Uslu, T.S. Mammadov, J. Appl. Polym. Sci. 120, 322–328 (2011)
T.T.A. Tuan, D.-H. Kuo, C.-C. Li, W.-C. Yen, J. Mater. Sci. Mater. Electron. 25, 3264–3270 (2014)
S.O. Tan, IEEE Trans. Electron Devices 64, 5121–5127 (2017)
D.M.C. Galicia, R.C. Perez, O.J. Sandoval, S.J. Sandoval, G.T. Delgado, C.I.Z. Romero, Thin Solid Films 371, 105 (2000)
M. Ortega, G. Santane, A. Morales-Acevedo, Superf. Vacio 9, 294 (1999)
J.K. Jha, R.S. Ortiz, J. Du, N.D. Shepherd, J. Mater. Sci. Mater. Electron. 25, 1492–1498 (2014)
W.E. Mahmoud, A.A. Al-Ghamdi, Opt. Laser Technol. 42, 1134–1138 (2010)
C. Tsiarapas, D. Girginoudi, N. Georgoulas, Superlattices Microstruct. 75, 171–182 (2014)
S.O. Tan, H. Uslu Tecimer, O. Çiçek, H. Tecimer, Ş. Altındal, J. Mater. Sci. Mater. Electron. 28, 4951–4957 (2017)
A. Sarıyıldız, Ö. Vural, M. Evecen, Ş. Altındal, J. Mater. Sci. Mater. Electron. 25, 4391–4397 (2014)
V.R. Reddy, V. Janardhanam, M.-S. Kang, C.-J. Choi, J. Mater. Sci. Mater. Electron. 25, 2379–2386 (2014)
H.C. Card, E.H. Rhoderick, J. Phys. D 4, 1589–1601 (1971)
S. Alialy, H. Tecimer, H. Uslu, Ş. Altındal, J. Nanomed. Nanotechnol. 4, 167–173 (2013)
J. Szatkowski, K. Sierański, Solid State Electron. 35, 1013–1015 (1992)
E. Marıl, S.O. Tan, Ş. Altındal, İ. Uslu, IEEE Trans. Electron Devices 65, 3901–3908 (2018)
İ. Taşçıoğlu, Ö. Tüzün Özmen, H.M. Şağban, E. Yağlıoğlu, Ş. Altındal, J. Electron. Mater. 46, 2379–2386 (2017)
M. Gandouzi, Z.R. Khan, A.S. Alshammaria, Comput. Mater. Sci. 156, 346–353 (2019)
J. Grosvalet, C. Jund, IEEE Trans. Electron Devices 14, 777–780 (1967)
D. Korucu, A. Türüt, R. Turan, Ş. Altındal, Mater. Sci. Semicond. Process. 16, 344–351 (2013)
E. Arslan, Y. Safak, S. Altındal, Ö. Kelekçi, E. Özbay, J. Noncryst. Solids 356, 1006–1011 (2010)
E.E. Tanrıkulu, S. Demirezen, Ş. Altındal, İ. Uslu, J. Mater. Sci. Mater. Electron. 29, 2890–2898 (2018)
C.H. Champness, W.R. Clark, Appl. Phys. Rev. Lett. 56, 1104 (1990)
A.A.M. Farag, I.S. Yahia, M. Fadel, Int. J. Hydrog. Energy 34, 4906–4913 (2009)
B.K. Jones, J. Santana, M. McPherson, Solid State Commun. 107, 47–50 (1998)
H. Tecimer, S.O. Tan, Ş. Altındal, IEEE Trans. Electron Devices 65, 231–236 (2018)
A. Dutta, C. Bharti, T.P. Sinha, Mater. Res. Bull. 43, 1246–1254 (2008)
G.D. Sharma, D. Saxena, M.S. Roy, Synth. Met. 106, 97–105 (1999)
E.H. Nicollian, J.R. Brews, Metal Oxide Semiconductor (MOS) Physics and Technology (Wiley, New York, 1982)
A. Büyükbaş Uluşan, A. Tataroğlu, Silicon 10, 2071–2077 (2018)
H. Saidi, W. Aloui, A. Bouazizi, J. Mater. Sci. Mater. Electron. 29, 18051–18058 (2018)
P.P. Sharmila, R.M. Sebastain, S. Sagar, E.M. Mohammed, N.J. Tharayil, Ferroelectrics 474, 144–155 (2015)
S. Suresh, J. Nano Res. 34, 91–97 (2015)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Rights and permissions
About this article
Cite this article
Taşçıoğlu, İ., Tan, S.O. & Altındal, Ş. Frequency, voltage and illumination interaction with the electrical characteristics of the CdZnO interlayered Schottky structure. J Mater Sci: Mater Electron 30, 11536–11541 (2019). https://doi.org/10.1007/s10854-019-01509-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10854-019-01509-4