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Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

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Abstract

In this work, annealing effects on the characteristics of bismuth-doped indium zinc oxide (IZBO) thin films and the electrical properties of IZBO thin-film transistors (TFTs) were investigated. The X-ray diffraction results reveal that all the IZBO thin films have an amorphous structure regardless of different annealing temperatures. In addition, all the a-IZBO thin films exhibit high transmittance in the visible light region. It is found that the annealing temperature has strong influences on the performances of a-IZBO TFTs. The devices annealed at 400 °C exhibit optimum performances with a field effect mobility of 25.4 cm2 V−1 s−1, a subthreshold swing of 0.22 V decade−1, a threshold voltage of −1.4 V and an on-to-off current ratio of 4.3 × 107. Stability of the devices under positive bias stress and negative bias stress were studied as well.

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References

  1. X. Yu, T.J. Marks, A. Facchetti, Metal oxides for optoelectronic applications. Nat. Mater. 15, 383–396 (2016)

    Article  Google Scholar 

  2. J.-R. Yim, S.-Y. Jung, H.-W. Yeon, J.-Y. Kwon, Y.-J. Lee, J.-H. Lee, Y.-C. Joo, Effects of metal electrode on the electrical performance of amorphous In–Ga–Zn–O thin film transistor. Jpn. J. Appl. Phys. 51, 011401 (2011)

    Article  Google Scholar 

  3. J.F. Wager, B. Yeh, R.L. Hoffman, D.A. Keszler, An amorphous oxide semiconductor thin-film transistor route to oxide electronics. Curr. Opin. Solid State Mater. Sci. 18, 53–61 (2014)

    Article  Google Scholar 

  4. E. Fortunato, P. Barquinha, R. Martins, Oxide semiconductor thin–film transistors: a review of recent advances. Adv. Mater. 24, 2945–2986 (2012)

    Article  Google Scholar 

  5. S. Ruzgar, M. Caglar, The effect of Sn on electrical performance of zinc oxide based thin film transistor. J. Mater. Sci.: Mater. Electron. 30(1), 485–490 (2019)

    Google Scholar 

  6. Y.S. Jung, J.Y. Seo, D.W. Lee, D.Y. Jeon, Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film. Thin Solid Films 445, 63–71 (2003)

    Article  Google Scholar 

  7. J.-Y. Kwon, D.-J. Lee, K.-B. Kim, Transparent amorphous oxide semiconductor thin film transistor. Electron. Mater. Lett. 7, 1–11 (2011)

    Article  Google Scholar 

  8. Y.J. Im, S.J. Kim, J.H. Shin, S.S. Ha, C.H. Park, M. Yi, Improvement in the electrical performance of Ge-doped InZnO thin-film transistor. J. Nanosci. Nanotechnol. 15, 7537–7541 (2015)

    Article  Google Scholar 

  9. M.H. Cho, H. Seol, A. Song, S. Choi, Y. Song, P.S. Yun, K.-B. Chung, J.U. Bae, K.-S. Park, J.K. Jeong, Comparative study on performance of IGZO transistors with sputtered and atomic layer deposited channel layer. IEEE Trans. Electron Devices 66, 1783–1788 (2019)

    Article  Google Scholar 

  10. R. Fu, J. Yang, W.C. Chang, W.C. Chang, C.M. Chang, D. Lin, Q. Zhang, P.T. Liu, H.P.D. Shieh, The influence of annealing temperature on amorphous Indium–Zinc–Tungsten Oxide thin–film transistors. Physica Status Solidi (a) 215(6), 1700785 (2018)

    Article  Google Scholar 

  11. H.-W. Park, B.-K. Kim, J.-S. Park, K.-B. Chung, Device performance and bias instability of Ta doped InZnO thin film transistor as a function of process pressure. Appl. Phys. Lett. 102, 102102 (2013)

    Article  Google Scholar 

  12. S. Parthiban, J.-Y. Kwon, Amorphous boron–indium–zinc-oxide active channel layers for thin-film transistor fabrication. J. Mater. Chem. C 3, 1661–1665 (2015)

    Article  Google Scholar 

  13. P.K. Jha, P.A. Jha, P. Kumar, K. Asokan, R. Dwivedi, Defect induced weak ferroelectricity and magnetism in cubic off-stoichiometric nano bismuth iron garnet: effect of milling duration. J. Mater. Sci.: Mater. Electron. 25(2), 664–672 (2014)

    Google Scholar 

  14. D.R. Lide, CRC handbook of chemistry and physics (CRC Press, Boca Raton, 2004)

    Google Scholar 

  15. S. Pi, J. Yang, Y. Han, Q. Zhang, Investigation of bismuth doped indium-zinc-oxide thin film transistors. J. Fudan Univ. 56, 309–313 (2017)

    Google Scholar 

  16. J. Yang, S. Pi, Y. Han, R. Fu, T. Meng, Q. Zhang, Characteristic of bismuth-doped tin oxide thin-film transistors. IEEE Trans. Electron Devices 63, 1904–1909 (2016)

    Article  Google Scholar 

  17. S. Aikawa, P. Darmawan, K. Yanagisawa, T. Nabatame, Y. Abe, K. Tsukagoshi, Thin-film transistors fabricated by low-temperature process based on Ga-and Zn-free amorphous oxide semiconductor. Appl. Phys. Lett. 102, 102101 (2013)

    Article  Google Scholar 

  18. K. Ide, K. Nomura, H. Hosono, T. Kamiya, Electronic defects in amorphous oxide semiconductors: a review. Physica Status Solidi (a) 216(5), 1800372 (2019)

    Article  Google Scholar 

  19. K. Ide, K. Nomura, H. Hiramatsu, T. Kamiya, H. Hosono, Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O. J. Appl. Phys. 111, 073513 (2012)

    Article  Google Scholar 

  20. K. Ide, K. Ishikawa, H. Tang, T. Katase, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya, Effects of base pressure on growth and optoelectronic properties of amorphous In–Ga–Zn–O: ultralow optimum oxygen supply and bandgap widening. Physica Status Solidi (a) 216(5), 1700832 (2019)

    Article  Google Scholar 

  21. J. Raja, K. Jang, N. Balaji, W. Choi, T. Thuy Trinh, J. Yi, Negative gate-bias temperature stability of N-doped InGaZnO active-layer thin-film transistors. Appl. Phys. Lett. 102(8), 083505 (2013)

    Article  Google Scholar 

  22. C. Liu, G. Li, R. Di Pietro, J. Huang, Y.-Y. Noh, X. Liu, T. Minari, Device physics of contact issues for the overestimation and underestimation of carrier mobility in field-effect transistors. Phys. Rev. Appl. 8, 034020 (2017)

    Article  Google Scholar 

  23. M. Kumar, H. Jeong, D. Lee, Solution-processed ZnO thin-film transistors codoped with Na and F. J. Mater. Sci.: Mater. Electron. 29(15), 13058–13067 (2018)

    Google Scholar 

  24. J. Yang, R. Fu, Y. Han, T. Meng, Q. Zhang, The stability of tin silicon oxide thin-film transistors with different annealing temperatures. Europhys. Lett. 115, 28006 (2016)

    Article  Google Scholar 

  25. J. Socratous, K.K. Banger, Y. Vaynzof, A. Sadhanala, A.D. Brown, A. Sepe, U. Steiner, H. Sirringhaus, Electronic structure of low-temperature solution–processed amorphous metal oxide semiconductors for thin-film transistor applications. Adv. Funct. Mater. 25, 1873–1885 (2015)

    Article  Google Scholar 

  26. D. Lin, S. Pi, J. Yang, N. Tiwari, J. Ren, Q. Zhang, P.-T. Liu, H.-P. Shieh, Enhanced stability of thin film transistors with double-stacked amorphous IWO/IWO: N channel layer. Semicond. Sci. Technol. 33, 065001 (2018)

    Article  Google Scholar 

  27. C.-S. Fuh, P.-T. Liu, W.-H. Huang, S.M. Sze, Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor. IEEE Electron Device Lett. 35, 1103–1105 (2014)

    Article  Google Scholar 

  28. B. Li, H. Wang, D. Zhou, Z. Hu, H. Wu, S. Gao, Y. Peng, L. Yi, X. Zhang, Y. Wang, Preparation and the electrical properties of In–Zn–Li–O thin film transistor by radio frequency magnetron sputtering. Mater. Lett. 137, 82–84 (2014)

    Article  Google Scholar 

  29. A.D. Lestari, I. Noviyana, M. Putri, Y.-W. Heo, H.Y. Lee, Effect of the active channel thickness variation in amorphous In–Zn–Sn–O thin film transistor. J. Nanosci. Nanotechnol. 19, 1686–1689 (2019)

    Article  Google Scholar 

  30. W. Xu, M. Xu, J. Jiang, C. Luan, L. Han, X. Feng, High performance thin film transistors with sputtered In–Al–Zn–O channel and different source/drain electrodes. IEEE Electron Device Lett. 40, 247–250 (2019)

    Article  Google Scholar 

  31. J. Yang, P.-Y. Liao, T.-C. Chang, H.-C. Chiang, B.-W. Chen, Y.-C. Chien, D. Lin, J. Ren, R. Fu, M. Qu, H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress. Appl. Phys. Lett. 111, 073506 (2017)

    Article  Google Scholar 

  32. S. Yue, J. Lu, R. Lu, S. Li, X. Li, J. Zhang, L. Chen, Z. Ye, Ultrathin amorphous ZnGexSnO films for high performance ultra-thin-film transistors. Appl. Phys. Lett. 113, 013504 (2018)

    Article  Google Scholar 

  33. Y. Vygranenko, K. Wang, A. Nathan, Stable indium oxide thin-film transistors with fast threshold voltage recovery. Appl. Phys. Lett. 91, 263508 (2007)

    Article  Google Scholar 

  34. J.K. Jeong, H. Won Yang, J.H. Jeong, Y.G. Mo, H.D. Kim, Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors. Appl. Phys. Lett. 93(12), 123508 (2008)

    Article  Google Scholar 

  35. W.-T. Chen, S.-Y. Lo, S.-C. Kao, H.-W. Zan, C.-C. Tsai, J.-H. Lin, C.-H. Fang, C.-C. Lee, Oxygen-dependent instability and annealing/passivation effects in amorphous In–Ga–Zn–O thin-film transistors. IEEE Electron Device Lett. 32, 1552–1554 (2011)

    Article  Google Scholar 

  36. P.-T. Liu, Y.-T. Chou, L.-F. Teng, Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress. Appl. Phys. Lett. 95, 233504 (2009)

    Article  Google Scholar 

Download references

Acknowledgments

This work was supported by the Science and Technology Commission of Shanghai Municipality (Grant No. 16JC1400603) and the National Natural Science Foundation of China (Grant No. 61471126).

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Authors and Affiliations

  1. Department of Materials Science, National Engineering Lab for TFT-LCD Materials and Technologies, Fudan University, Shanghai, 200433, China

    Dong Lin, Xudong Zheng, Jianwen Yang, Kaiwen Li, Jingjing Shao & Qun Zhang

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Lin, D., Zheng, X., Yang, J. et al. Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors. J Mater Sci: Mater Electron 30, 12929–12936 (2019). https://doi.org/10.1007/s10854-019-01655-9

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