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Investigation on electrical characteristics of amorphous InZnSnMgO thin film transistors deposited at room-temperature

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Abstract

The bottom-gate top-contact amorphous InZnSnMgO (a-IZTMO) thin film transistors (TFTs) were fabricated by radio frequency (RF) magnetron sputtering in this paper. The X-ray diffraction pattern indicated the IZTMO thin film annealed at 350 °C was amorphous. The a-IZTMO thin film exhibited high transmittance in the visible range. The electrical performance of a-IZTMO TFTs were investigated which exhibited an excellent performance with a saturated mobility (μsat) of 36.6 cm2 v−1 s−1, subthreshold swing (SS) of 0.34 V dec−1, and threshold voltage (VTH) of 1.1 V. The bias stress stability of the a-IZTMO TFT was also investigated. The VTH shifted respectively about + 4.4 V and − 5.6 V after 3600 s of positive bias stress (PBS) and negative bias stress (NBS).

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant Nos. 51772019 and 51372016).

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, China

    Depeng Liu, Lanchao Jia, Jinbao Su, Yaobin Ma, Ran Li, Shiqian Dai, Ye Wang, Hui Yang & Xiqing Zhang

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  1. Depeng Liu
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Liu, D., Jia, L., Su, J. et al. Investigation on electrical characteristics of amorphous InZnSnMgO thin film transistors deposited at room-temperature. J Mater Sci: Mater Electron 30, 20551–20555 (2019). https://doi.org/10.1007/s10854-019-02419-1

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