Skip to main content
SpringerLink
Log in

Electronic Structure and Magnetic Properties of Zinc-Blende Co-Doped GaN with N Vacancies

  • Original Paper
  • Published:
Journal of Superconductivity and Novel Magnetism Aims and scope Submit manuscript

Abstract

The electronic structure and magnetic properties of zinc-blende structure of (Ga,Co)N phase with N vacancy defects are investigated using the Korringa–Kohn–Rostoker (KKR) method combined with coherent potential approximation (CPA). The results show that (Ga,Co)N phase is ferromagnetically polarized with an enhancement of the polarization and that the electronic structure can be modified simply by changing the concentration of N vacancies. Moreover, the (Ga,Co)N with high density of N vacancies shows a drastic increase of the magnetic moment of cobalt in the parent GaN compound, to reach a maximum value of 1.7 μB/Co at 8 at.%, which is in good agreement with the experimental values reported in the literature.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. Nakamura, S., Chichibu, S.F.: Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes. Taylor & Francis, London (2000)

    Google Scholar 

  2. Chichibu, S.F., Sugiyama, M., Onuma, T., Kitamura, T., Nakanishi, H., Kuroda, T., Tackeuchi, A., Sota, T., Ishida, Y., Okumura, H.: Appl. Phys. Lett. 79, 4319 (2001)

    Article  ADS  Google Scholar 

  3. Melnik, R., Mahapatra, R.: Comput. Struct. 85, 698 (2007)

    Article  Google Scholar 

  4. Chichibu, S.F., Onuma, T., Sota, T., Denbaars, S.P., Nakamura, S., Kitamura, T., Ishida, Y., Okumura, H.: J. Appl. Phys. 93, 2051 (2003)

    Article  ADS  Google Scholar 

  5. Simon, J., Pelekanos, N.T., Adelmann, C., Guerrero, E.M., Daudin, B., Dang, L.S., Mariette, H.: Phys. Rev. B 68, 035312 (2003)

    Article  ADS  Google Scholar 

  6. Adelmann, C., Guerrero, E.M., Chabuel, F., Simon, J., Bataillou, B., Mula, G., Gang, L.S., Pelekanos, N.T., Daudin, B., Feuillet, G., Mariette, H.: Mater. Sci. Eng. B 82, 212 (2001)

    Article  Google Scholar 

  7. Garayt, J.P., Gerard, J.M., Enjalbert, F., Ferlazzo, L., Founta, S., Guerrero, E.M., Rol, F., Araujo, D., Cox, R., Daudin, B., Gayral, B., Dang, L.S., Mariette, H.: Physica E 26, 203 (2005)

    Article  ADS  Google Scholar 

  8. Guerrero, E.M., Adelmann, C., Chabuel, F., Simon, J., Pelekanos, N.T., Mula, G., Daudin, B., Feuillet, G., Mariette, H.: Appl. Phys. Lett. 77, 809 (2000)

    Article  ADS  Google Scholar 

  9. Guerrero, E.M., Chabuel, F., Daudin, B., Rouviere, J.L., Mariette, H.: Appl. Phys. Lett. 81, 5117 (2002)

    Article  ADS  Google Scholar 

  10. Coey, J.M.D., Venkatesan, M., Fitzgerald, C.B.: Nat. Mater. 4, 173 (2005)

    Article  ADS  Google Scholar 

  11. Akai, H.: J. Phys. Condens. Matter 1, 8045 (1989)

    Article  ADS  Google Scholar 

  12. Vosko, S.H., Wilk, L., Nusair, M.: Can. J. Phys. 58, 1200 (1980)

    Article  ADS  Google Scholar 

  13. MACHIKANEYAMA2002v08: H. Akai, Department of Physics, Graduate School of Science, Osaka University, Machikaneyama 1-1, Toyonaka 560-0043, Japan, akai@phys.sci.osaka-u.ac.jp

  14. Zhao, Y.J., Geng, W.T., Park, K.T., Freeman, A.J.: Phys. Rev. B 64, 35207 (2001)

    Article  ADS  Google Scholar 

  15. Xu, Y.Q., Liu, B.G., Pettifor, D.G.: Phys. Rev. B 66, 184435 (2002)

    Article  ADS  Google Scholar 

  16. Pask, J.E., Yang, L.H., Fong, C.Y., Pickett, W.E., Dag, S.: Phys. Rev. B 67, 224420 (2003)

    Article  ADS  Google Scholar 

  17. Lee, J.S., Lim, J.D., Khim, Z.G., Park, Y.D., Pearton, S.J., Chu, S.N.G.: Magnetic and structural properties of Co, Cr, V ion-implanted GaN. J. Appl. Phys. 93(8), 4512–4516 (2003)

    Article  ADS  Google Scholar 

  18. Sawahata, J., Bang, H., Takiguchi, M., Seo, J., Yanagihara, H., Kita, E., Akimoto, K.: Structural and magnetic properties of Co doped GaN. Phys. Status Solidi C 2(7), 2458–2462 (2005)

    Article  ADS  Google Scholar 

  19. Dhara, S., Sundaravel, B., Nair, K.G.M., Kesavamoorthy, R., Valsakumar, M.C., Chandrasekhar Rao, T.V., Chen, L.C., Chen, K.H.: Ferromagnetism in cobalt-doped n-GaN. Appl. Phys. Lett. 88, 173110 (2006)

    Article  ADS  Google Scholar 

  20. He, J., Wang, Z.S., Li, M., Fu, D.J.: Structural and magnetic characterization of cobalt implanted GaN films. Nucl. Instrum. Methods Phys. Res., Sect. B, Beam Interact. Mater. Atoms 269, 1041–1045 (2011)

    Article  ADS  Google Scholar 

  21. Husnain, G., Yao, S.-D., Ahmad, I., Rafique, H.M., Mahmood, A.: Characterization of n-GaN dilute magnetic semiconductors by cobalt ions implantation at high-fluence. J. Magn. Magn. Mater. 324, 797–801 (2012)

    Article  ADS  Google Scholar 

  22. Ganesh, V., Suresh, S., Celasco, E., Baskar, K.: Structural and magnetic properties of pure and cobalt doped gallium nitride nanocrystals. In: Mater. Res. Soc. Symp. Proc., vol. 1257. Materials Research Society, Warrendale (2010)

    Google Scholar 

  23. Munawar Basha, S., Ramasubramanian, S., Rajagopalan, M., Kumar, J., Kang, T.W., Ganapathi Subramaniam, N., Kwon, Y.: Investigations on cobalt doped GaN for spintronic applications. J. Cryst. Growth 318, 432–435 (2011)

    Article  ADS  Google Scholar 

  24. Stamplecoskie, K.G., Ju, L., Farvid, S.S., Radovanovic, P.V.: General control of transition-metal-doped GaN nanowire growth: toward understanding the mechanism of dopant incorporation. Nano Lett. 8–9, 2674–2681 (2009)

    ADS  Google Scholar 

  25. Zajac, M., Gosk, J., Grzanka, E., Stelmakh, S., Palczewska, M., Wysmolek, A., Korona, K., Kamińska, M., Twardowski, A.: Ammonothermal synthesis of GaN doped with transition metal ions (Mn, Fe, Cr). J. Alloys Compd. 456, 324–338 (2008)

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Laboratoire de Magnétisme et de Physique des Hautes Energies, URAC 12, Département de Physique, Faculté des Sciences, Université Mohammed V-Agdal, B.P. 1014, Rabat, Morocco

    N. Mamouni, A. Benyoussef, A. El Kenz & H. Ez-Zahraouy

  2. Institute of Nanomaterials and Nanotechnology, MAScIR, Rabat, Morocco

    A. Benyoussef

  3. Hassan II Academy of Sciences and Technologies, Rabat, Morocco

    A. Benyoussef

  4. Nanotechnology Center, University of Bahrain, P.O. Box 32038, Sukhair Campus City, Bahrain

    M. Bououdina

  5. Department of Physics, College of Science, University of Bahrain, P.O. Box 32038, Sukhair Campus City, Bahrain

    M. Bououdina

Authors
  1. N. Mamouni
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Benyoussef
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. A. El Kenz
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. H. Ez-Zahraouy
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Bououdina
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. El Kenz.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Mamouni, N., Benyoussef, A., El Kenz, A. et al. Electronic Structure and Magnetic Properties of Zinc-Blende Co-Doped GaN with N Vacancies. J Supercond Nov Magn 26, 663–667 (2013). https://doi.org/10.1007/s10948-012-1779-7

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10948-012-1779-7

Keywords

Search

Navigation