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Ab Initio Study of Electronic and Magnetic Properties of Ga1-x Co x N (Doped) and Ga1-x-y Co x Cr y N (Co-doped)

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Abstract

Using the Korring–Kohn–Rostoker (KKR) method combined with the coherent potential approximation (CPA) we study the electronic structure and magnetic properties of the doped and co-doped of Ga1-x Co x N and Ga1-x-y Co x Cr y N materials with single and double impurities, respectively. The total and local density of state (DOS) in two systems are obtained We investigate the effect of the different values of dilution in Ga1-x Co x N and Ga1-x-y Co x Cr y N. On the other hand, the magnetic moment and the gap energies are deduced for different values of concentrations.

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Authors and Affiliations

  1. LPHE-MS, Faculty of Science, Mohammed V University, Rabat, Morocco

    N. Rkhioui & O. El Bounagui

  2. Laboratory of Magnetism, Physics and High Energy (LMPHE-URAC 12), Mohammed V University, Rabat, Morocco

    N. Tahiri

Authors
  1. N. Rkhioui
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  2. N. Tahiri
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  3. O. El Bounagui
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Correspondence to N. Tahiri.

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Rkhioui, N., Tahiri, N. & Bounagui, O.E. Ab Initio Study of Electronic and Magnetic Properties of Ga1-x Co x N (Doped) and Ga1-x-y Co x Cr y N (Co-doped). J Supercond Nov Magn 30, 165–170 (2017). https://doi.org/10.1007/s10948-016-3687-8

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  • DOI: https://doi.org/10.1007/s10948-016-3687-8

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