Abstract
We have calculated the electronic band structure and polarization dependent optical gain in a strain balanced SixGeySn1−x−y/GezSn1−z based transistor laser (TL) with GezSn1−z single quantum well (QW) in the base. Design consideration for QW is also addressed to ensure moderate carrier and optical confinement. A significant TE mode optical gain is obtained in mid infra red region for the transition of Г valley conduction band to heavy hole valence band. Optical gain in the QW plays an important role in determining the optical characteristics of Tin (Sn) incorporated group IV material based TL.
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This work is partly supported by UGC, Govt. of India through the SAP Project Grant for the Department of Electronics Engineering in the thrust area, Modeling of Semiconductor Nanostructured Devices.
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This article is part of the Topical Collection on Numerical Simulation of Optoelectronic Devices, NUSOD’ 15.
Guest edited by Julien Javaloyes, Weida Hu, Slawek Sujecki and Yuh-Renn Wu.
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Ranjan, R., Das, M.K. Theoretical estimation of optical gain in Tin-incorporated group IV alloy based transistor laser. Opt Quant Electron 48, 201 (2016). https://doi.org/10.1007/s11082-016-0459-4
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DOI: https://doi.org/10.1007/s11082-016-0459-4