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Tunable graphene-on-insulator band-stop filter at the mid-infrared region

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Abstract

This paper presents a novel graphene-on-insulator (GOI) band-stop filter in the mid-infrared region. The finite-difference time-domain method is used to model our GOI basic and advanced filters and calculate their transmission spectra for different graphene layers at every gate-source voltage. The numerical results reveal the resonance wavelength, modulation depth, and bandwidth of the advanced filter can be tuned in the range of 11.5 to 30 µm, − 57 to − 60 dB, and 2 to 4 µm, respectively. These results are obtained by variation of the physical parameters, such as the number of overlapped filters, the number of graphene layers, and the applied chemical potential. Our results indicate that the proposed advanced band-stop filter is an excellent device to be used in an ultra-fast active graphene-based plasmonic systems for THz applications.

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source voltages. The inset shows a four-layer 2D graphene sheet

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Correspondence to Hamed Saghaei.

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Naghizade, S., Saghaei, H. Tunable graphene-on-insulator band-stop filter at the mid-infrared region. Opt Quant Electron 52, 224 (2020). https://doi.org/10.1007/s11082-020-02350-4

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  • DOI: https://doi.org/10.1007/s11082-020-02350-4

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