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Regularities of Changes in the Properties of Silicon Single Crystals under Low-Dose Beta-Irradiation

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Russian Physics Journal Aims and scope

Regularities of changes in the mechanical properties (micro- or nanohardness, fracture toughness at indentation, and steady-state creep rate) and electrical characteristics (Hall constant, conductivity, and concentration of electrically active defects) of silicon single crystals under low-dose (F < 1012 cm–2) low-intensity (I ~ 106 cm–2∙s–1) beta-irradiation are described. The mechanism of nonmonotonic beta-induced softening of silicon is discussed.

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  1. Tambov State University named after G. R. Derzhavin, Tambov, Russia

    A. A. Dmitrievskiy

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  1. A. A. Dmitrievskiy
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Correspondence to A. A. Dmitrievskiy.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 85–94, August, 2013.

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Dmitrievskiy, A.A. Regularities of Changes in the Properties of Silicon Single Crystals under Low-Dose Beta-Irradiation. Russ Phys J 56, 942–952 (2013). https://doi.org/10.1007/s11182-013-0122-5

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  • DOI: https://doi.org/10.1007/s11182-013-0122-5

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