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Carbon nanotube transistors with graphene oxide films as gate dielectrics

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Abstract

Carbon nanomaterials, including the one-dimensional (1-D) carbon nanotube (CNT) and two-dimensional (2-D) graphene, are heralded as ideal candidates for next generation nanoelectronics. An essential component for the development of advanced nanoelectronics devices is processing-compatible oxide. Here, in analogy to the widespread use of silicon dioxide (SiO2) in silicon microelectronic industry, we report the proof-of-principle use of graphite oxide (GO) as a gate dielectrics for CNT field-effect transistor (FET) via a fast and simple solution-based processing in the ambient condition. The exceptional transistor characteristics, including low operation voltage (2 V), high carrier mobility (950 cm2/V−1 s−1), and the negligible gate hysteresis, suggest a potential route to the future all-carbon nanoelectronics.

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Authors and Affiliations

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    WangYang Fu, Lei Liu, WenLong Wang, MuHong Wu, Zhi Xu, XueDong Bai & EnGe Wang

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  1. WangYang Fu
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  2. Lei Liu
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  3. WenLong Wang
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  4. MuHong Wu
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  5. Zhi Xu
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  6. XueDong Bai
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  7. EnGe Wang
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Correspondence to XueDong Bai or EnGe Wang.

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Recommended by NIE YuXin

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Fu, W., Liu, L., Wang, W. et al. Carbon nanotube transistors with graphene oxide films as gate dielectrics. Sci. China Phys. Mech. Astron. 53, 828–833 (2010). https://doi.org/10.1007/s11433-010-0179-x

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  • DOI: https://doi.org/10.1007/s11433-010-0179-x

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