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β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

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Abstract

β-Ga2O3 MOSFETs are demonstrated on heterogeneous Ga2O3-Al2O3-Si (GaOISi) substrate fabricated by ion-cutting process. Enhancement (E)- and depletion (D)-mode β-Ga2O3 transistors are realized on by varying the channel thickness (Tch). E-mode GaOISi transistor with a Tch of 15 nm achieves a high threshold voltage VTH of ∼8 V. With the same T increase, GaOISi transistors demonstrate more stable ON-current ION and OFF-current IOFF performance compared to the reported devices on bulk Ga2O3 wafer. Transistors on GaOISi achieve the breakdown voltage of 522 and 391 V at 25°C and 200°C, respectively.

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, 710071, China

    YiBo Wang, HaoDong Hu, Yan Liu, GenQuan Han & Yue Hao

  2. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    WenHui Xu, TianGui You, Hao Huang & Xin Ou

  3. The Collaborative Research Center, Meisei University, Hino-shi, Tokyo, 191-8506, Japan

    FengWen Mu & Tadatomo Suga

Authors
  1. YiBo Wang
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  2. WenHui Xu
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  3. TianGui You
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  4. FengWen Mu
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  5. HaoDong Hu
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  6. Yan Liu
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  7. Hao Huang
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  8. Tadatomo Suga
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  9. GenQuan Han
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  10. Xin Ou
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  11. Yue Hao
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Corresponding authors

Correspondence to GenQuan Han or Xin Ou.

Additional information

This work was supported by the National Key Research and Development Project (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61851406, 61874128, 11622545 61534004, 61604112, and 61622405), the Frontier Science Key Program of Chinese Academy of Sciences (Grant No. QYZDY-SSW-JSC032), and the Shanghai Municipal Science and Technology Commission (Grant No. 18511110503).

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Wang, Y., Xu, W., You, T. et al. β-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process. Sci. China Phys. Mech. Astron. 63, 277311 (2020). https://doi.org/10.1007/s11433-020-1533-0

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  • DOI: https://doi.org/10.1007/s11433-020-1533-0

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