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Research progress in ZnO single-crystal: growth, scientific understanding, and device applications

  • Review
  • Semiconductor Technology
  • Published:
Chinese Science Bulletin

Abstract

Zinc oxide, a wide band-gap semiconductor, has shown extensive potential applications in high-efficiency semiconductor photoelectronic devices, semiconductor photocatalysis, and diluted magnetic semiconductors. Due to the undisputed lattice integrity, ZnO single crystals are essential for the fabrication of high-quality ZnO-based photoelectronic devices, and also believed to be ideal research subjects for understanding the underlying mechanisms of semiconductor photocatalysis and diluted magnetic semiconductors. This review, which is organized in two main parts, introduces the recent progress in growth, basic characterization, and device development of ZnO single crystals, and some related works in our group. The first part begins from the growth of ZnO single crystal, and summarizes the fundamental and applied investigations based on ZnO single crystals. These works are composed of the fabrication of homoepitaxial ZnO-based photoelectronic devices, the research on the photocatalysis mechanism, and dilute magnetic mechanism. The second part describes the fabrication of highly thermostable n-type ZnO with high mobility and high electron concentration through intentional doping. More importantly, in this part, a conceptual approach for fabricating highly thermostable p-type ZnO materials with high mobility through an integrated three-step treatment is proposed on the basis of the preliminary research.

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Notes

  1. Up to now, industrialized hydrothermal growth of quartz crystal has been achieved. The output of the quartz by hydrothermal method has surpassed 1,850 tons in 2004. The technique and craft of the hydrothermal growth have been maturely developed, which means that industrial production of ZnO+ single crystal might be realized via this method.

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Acknowledgments

I thank my current and prior group members (not in order): Shunle Huang, Zhongchao Lin, Jiakui Huang, Bingxi Lin, Yishan Hou, Saiying Chen, Shicheng Lin, Guiyang Fang, Yongcang Ke, Qingqing Kang, Wei Li, Ruilong Wang, Shuhui Wu, and Guohong Wang. This work was supported by the National Natural Science Foundation of China (60736032, 20971123, 51002153, 21007070, 51102232, 61106004 and 21103191), the National Basic Research Program of China (2007CB936703), the Knowledge Innovation Program of the Chinese Academy of Sciences (KJC2.YW.317, KJC2.YW.W01), the Fujian Natural Science Foundation of China (2005HZ1023, 2006F3140, 2007F3113, 2007HZ0005-3, 2010J01054, 2010J06006, 2010J05038 and 2012J05033), and the China National Funds for Distinguished Young Scientists (50625205). I would like to thank FJIRSM test center for years of support in facility and infrastructure.

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Authors and Affiliations

  1. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter (FJIRSM), Chinese Academy of Sciences, Fuzhou, 350002, China

    Feng Huang, Wenwen Lin, Jiye Zhang, Kai Ding, Yonghao Wang, Qinghong Zheng, Zhibing Zhan, Fengbo Yan, Dagui Chen, Peiwen Lv & Xian Wang

  2. State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter (FJIRSM), Chinese Academy of Sciences, Fuzhou, 350002, China

    Zhang Lin

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  1. Feng Huang
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Correspondence to Feng Huang.

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SPECIAL TOPIC: Wide Bandgap Semiconductor Materials and Devices

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Huang, F., Lin, Z., Lin, W. et al. Research progress in ZnO single-crystal: growth, scientific understanding, and device applications. Chin. Sci. Bull. 59, 1235–1250 (2014). https://doi.org/10.1007/s11434-014-0154-4

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