Abstract
Group III-nitride material system possesses some unique properties, such as large spectrum coverage from infrared to deep ultraviolet, wide energy band gap, high electron saturation velocity, high electrical breakdown field, and strong polarization effect, which enables the big family has a very wide application range from optoelectronic to power electronic area. Furthermore, the successful growth of GaN-related III-nitride material on large size silicon substrate enable the above applications easily realize the commercialization, because of the cost-effective device fabrication on the platform of Si-based integrated circuits. In this article, the progress and development of the GaN-based materials and light-emitting diodes grown on Si substrate were summarized, in which some key issues regarding to the material growth and device fabrication were reviewed.
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Acknowledgments
This work was supported by the National Basic Research Program of China (2010CB923200 and 2011CB301903), the National High Technology Research and Development Program of China (2011AA03A101), the National Natural Science Foundation of China (61274039 and 51177175), Ph.D. Programs Foundation of Ministry of Education of China (20110171110021), and the Foundation of the Key Technologies R&D Program of Guangdong Province (2010A081002005). Authors also would like to give thanks to their students: Peng Xiang, Minggang Liu, Yibin Yang, Weijie Chen, Guoheng Hu, Yiqiang Ni, Fan Yang, Yao Yao, and Zhiyuan He for their helps.
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SPECIAL TOPIC: Wide Bandgap Semiconductor Materials and Devices
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Zhang, B., Liu, Y. A review of GaN-based optoelectronic devices on silicon substrate. Chin. Sci. Bull. 59, 1251–1275 (2014). https://doi.org/10.1007/s11434-014-0169-x
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DOI: https://doi.org/10.1007/s11434-014-0169-x