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Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD

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Abstract

High-quality zinc oxide (ZnO) films were epitaxially grown on R-plane sapphire substrates by metalorganic chemical vapor deposition at temperatures in the range of 350°C to 600°C. In-situ nitrogen compensation doping was performed using NH3. Microstructural and optical properties of the films, as well as the N-doping effects, were studied. The metal-semiconductor-metal ultraviolet sensitive photodetectors were fabricated on N-doped epitaxial ZnO films. The detector showed fast photoresponse, with a rise time of 1 µs and a fall time of 1.5 µs. Low-frequency photoresponsivity, on the order of 400 A/W at 5 V bias, was obtained.

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Authors and Affiliations

  1. Department of Computer and Electrical Eng., Rutgers University, 94 Brett Road, 08854, Piscataway, NJ

    Y. Liu, C. R. Gorla, S. Liang, N. Emanetoglu & Y. Lu

  2. U.S. Army Research Laboratory, Sensors and Electron Devices Directorate, AMSRL-SE-EM, 20783, Adelphi, Maryland

    H. Shen & M. Wraback

Authors
  1. Y. Liu
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  2. C. R. Gorla
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  3. S. Liang
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  4. N. Emanetoglu
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  5. Y. Lu
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  6. H. Shen
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  7. M. Wraback
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Liu, Y., Gorla, C.R., Liang, S. et al. Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD. J. Electron. Mater. 29, 69–74 (2000). https://doi.org/10.1007/s11664-000-0097-1

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  • DOI: https://doi.org/10.1007/s11664-000-0097-1

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