Abstract
Scanning force microscopy was used to examine the surfaces of AlGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) on GaN templates prepared by hydride vapor phase epitaxy (HVPE). Away from dislocations, the MBE growth replicates the surface morphology of the HVPE film, with monolayer steps clarly visible in topographic images. However, the surface morphology near dislocations depends strongly on the MBE growth conditions. Under Ga rich growth the dislocations appear as hillocks, while under stoichiometric growth they appear as pits. A dependence on Al concentration is also observed. Surface contact potential variation near dislocations is consistent with excess negative charges surrounding by a depletion region, but this was observed only for the film grown under stoichiometric conditions.
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Hsu, J.W.P., Manfra, M.J., Lang, D.V. et al. Surface morphology and electronic properties of dislocations in AlGaN/GaN heterostructures. J. Electron. Mater. 30, 110–114 (2001). https://doi.org/10.1007/s11664-001-0002-6
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DOI: https://doi.org/10.1007/s11664-001-0002-6