Abstract
The Smart-Cut® process, based on ion implantation (hydrogen, helium) and wafer bonding, appears more and more as a generic process. The first part of the paper is dedicated to the specific case of thermally-induced splitting. Cavity growth by the Ostwald ripening mechanism and crack propagation are responsible for thermally-induced splitting. In this case, the splitting kinetics are controlled by hydrogen diffusion. In the second part, the latest results concerning new structures are presented.
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Aspar, B., Moriceau, H., Jalaguier, E. et al. The generic nature of the Smart-Cut® process for thin film transfer. J. Electron. Mater. 30, 834–840 (2001). https://doi.org/10.1007/s11664-001-0067-2
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DOI: https://doi.org/10.1007/s11664-001-0067-2