Abstract
The HgCdTe infrared detectors and test structures based on dual or multicolor HgCdTe are desirable for various applications. It is important to control both p-and n-type extrinsic doping in these photovoltaic structures. This paper addresses the issue of activating arsenic as a p-type dopant at temperatures sufficiently low that they will not compromise the integrity of p-n junctions. Midwavelength infrared (MWIR) HgCdTe epilayers were grown by molecular beam epitaxy (MBE) using an In-free type of mounting. The doping was performed by coevaporating arsenic from an elemental solid source during the growth. During postgrowth treatments, we employed a two-step annealing process. During both steps, we used temperatures (300°C, 275°C, and 250°C) that are well below the current standard annealing temperatures. The results suggest that the energy barrier for As transfer from Hg to Te sites can be overcome at 250°C; hence, p doping can be achieved at the temperature of 250°C. The temperature-dependent Hall effect characteristics of the grown samples were measured by the van der Pauw technique with magnetic fields up to 0.4 T.
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Boieriu, P., Chen, Y. & Nathan, V. Low-temperature activation of As in Hg1−xCdxTe(211) grown on Si by molecular beam epitaxy. J. Electron. Mater. 31, 694–698 (2002). https://doi.org/10.1007/s11664-002-0221-5
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DOI: https://doi.org/10.1007/s11664-002-0221-5