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GaN and other materials for semiconductor spintronics

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Abstract

Existing semiconductor electronic and photonic devices use the charge on electrons and holes to perform their specific functionality, such as signal processing or light emission. The field of semiconductor spintronics seeks to exploit the spin of charge carriers in new generations of transistors, lasers, and integrated magnetic sensors. The use of such devices depends on the availability of materials with practical magnetic-ordering temperatures. Here, we summarize recent progress in the development of GaN and other wide bandgap semiconductors that retain ferromagnetic properties above room temperature.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of Florida, 32611, Gainesville, FL

    S. J. Pearton, C. R. Abernathy, M. E. Overberg & G. T. Thaler

  2. Center for Strongly Correlated Materials Research, Seoul National University, 151-747, Seoul, Korea

    Y. D. Park

  3. Department of Chemical Engineering, University of Florida, 32611, Gainesville, FL

    Jihyun Kim & F. Ren

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  1. S. J. Pearton
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Pearton, S.J., Park, Y.D., Abernathy, C.R. et al. GaN and other materials for semiconductor spintronics. J. Electron. Mater. 32, 288–297 (2003). https://doi.org/10.1007/s11664-003-0147-6

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