ZnO is an attractive candidate for spintronics studies because of its potential for exhibiting high Curie temperatures and the relative lack of ferromagnetic second phases in the material. In this paper, we review experimental results on transition-metal (TM) doping of ZnO and the current state of theories for ferromagnetism. It is important to re-examine some of the earlier concepts for spintronics devices, such as the spin field-effect transistor, to account for the presence of the strong magnetic field that has deleterious effects. In some of these cases, the spin device appears to have no advantage relative to the conventional charge-control electronic analog. We have been unable to detect optical spin polarization in ZnO.
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Acknowledgements
The work at UF is partially supported by AFOSR Grant No. F49620-03-1-0370, by Army Research Office Grant No. DAAD19-01-1-0603, by the NSF (Grant No. CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), and by the National Science Foundation (Grant No. DMR 0400416, monitored by Dr. L. Hess). This work was also supported by the postdoctoral fellowship program of the Korea Science & Engineering Foundation. The valuable collaborations on these projects with R. Rairigh, K. Ip, R. Frazier, G. Thaler, R.G. Wilson, and Y.D. Park are appreciated.
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Pearton, S., Norton, D., Ivill, M. et al. Ferromagnetism in Transition-Metal Doped ZnO. J. Electron. Mater. 36, 462–471 (2007). https://doi.org/10.1007/s11664-006-0034-z
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DOI: https://doi.org/10.1007/s11664-006-0034-z