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Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well

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Abstract

We studied the transport and low-field mobility properties of bulk InN and a two-dimensional electron gas confined in an InGaN/GaN quantum well with regard to various parameters such as well width and interface roughness as a function of temperature. Since new material parameters for InN have been suggested by recent studies, the traditionally accepted and recently published parameter values for InN are used in our simulations and the results are compared. Mobility values in two and three dimensions are found from the steady-state drift velocities of carriers calculated using an ensemble Monte Carlo technique. Electron transport properties of bulk GaN and AlN are also presented and compared with bulk InN and InGaN/GaN quantum wells. The mobility of carriers in two dimensions is about 10,000 cm2/V s for low temperatures and in bulk InN increases significantly to a value of about 6,450 cm2/V s at room temperature when recently established material parameters are used.

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REFERENCES

  1. V.Yu. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A.V. Murdryi, J. Aderhold, O. Semchinova, J. Graul, Phys. Stat. Sol. (b), 229 R1, (2002).

    Article  CAS  Google Scholar 

  2. V.Yu. Davydov, A.A. Klochikhin, V.V. Emtsev, S.V. Ivanov, V.V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A.V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul and E.E. Haller, Phys. Stat. Sol. (b), 230 R4, (2002).

    Article  CAS  Google Scholar 

  3. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, Hai Lu, W.J. Schaff, Y. Saito, Y. Nanishi, Appl. Phys. Lett., 80, 3967, (2002).

    Article  CAS  Google Scholar 

  4. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, Y. Nanishi, Appl. Phys. Lett. 80,4741, (2002).

    Article  CAS  Google Scholar 

  5. A.G. Bhuiyan, A. Hashimoto and A. Yamamoto, J. Appl. Phys. 94, 2779, (2003).

    Article  CAS  Google Scholar 

  6. P. Carrier and S. -H. Wei J. Appl. Phys., 97, 033707, (2005).

    Article  Google Scholar 

  7. I. Vurgaftman and J.R. Meyer, J. Appl. Phys., 89, 5816 (2001).

    Article  Google Scholar 

  8. I. Vurgaftman and J.R. Meyer, J. Appl. Phys., 94, 3675, (2003).

    Article  CAS  Google Scholar 

  9. B.R. Nag, Phys. Status Solidi (b), 237, R1, (2003).

    Article  CAS  Google Scholar 

  10. S.P. Fu and Y.F. Chen, Appl. Phys. Lett., 85, 1523, (2004).

    Article  CAS  Google Scholar 

  11. B. Arnaudov, T. Paskova, P.P. Paskov, B. Magnusson, E. Valcheva, B. Monemar, H. Lu, W.J. Schaff, H. Amano and I. Akasaki, Phys. Rev. B, 69, 115216, (2004).

    Article  Google Scholar 

  12. Q.X. Guo, T. Tanaka, M. Nishio, H. Ogawa, X.D. Pu and W.Z. Shen, Appl. Phys. Lett., 86, 231913, (2005).

    Article  Google Scholar 

  13. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B, 10, 1237, (1992).

    Article  CAS  Google Scholar 

  14. C. Wetzel, T. Takeuchi, S. Yamaguchi, H. Katoh, H. Amono and I. Akasaki, Appl. Phys. Lett., 73, 1994, (1998).

    Article  CAS  Google Scholar 

  15. W. Liang, K. T. Tsen, D. K. Ferry, H. Lu and W. J. Schaff, Appl. Phys. Lett., 84, 3681, (2004).

    Article  CAS  Google Scholar 

  16. K.T. Tsen, C. Poweleit, D.K. Ferry, H. Lu and W.J. Schaff, Appl. Phys. Lett., 86, 222103, (2005).

    Article  Google Scholar 

  17. E. Bellotti, B.K. Doshi and K.F. Brennan, J. Appl. Phys. 85, 916 (1999).

    Article  CAS  Google Scholar 

  18. W. Walukiewicz, S.1K. Li, J. Wu, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu and W.J. Schaff, J. Cryst. Growth, 269, 119, (2004).

    Article  CAS  Google Scholar 

  19. C.H. Swartz, R.P. Tomkins, T.H. Myers, H. Lu and W.J. Schaff, Phys. Status Solidi (c), 2, 2250, (2005).

    Article  CAS  Google Scholar 

  20. F. Chen, A.N. Cartwright, H. Lu and W.J. Schaff, J. Cryst. Growth, 269, 10, (2004).

    Article  CAS  Google Scholar 

  21. B.R. Nag, J. Cryst. Growth, 269, 35, (2004).

    Article  CAS  Google Scholar 

  22. V.M. Polyakov and F. Schwierz, Appl. Phys. Lett., 88, 032101, (2006).

    Article  Google Scholar 

  23. B.E. Foutz, S.K. O’Leary, M.S. Shur and L.F. Eastman, J. Appl. Phys., 85, 7727, (1999).

    Article  CAS  Google Scholar 

  24. S.K. O’Leary, B.E. Foutz, M.S. Shur and L.F. Eastman, Appl. Phys. Lett., 87, 222103, (2005).

    Article  Google Scholar 

  25. C. Bulutay and B.K. Ridley, Superlattices Microstruct., 36, 465, (2004).

    Article  CAS  Google Scholar 

  26. Y.C. Yeo, T.C. Chong and M.F. Li, J. Appl. Phys., 83, 1429, (1998).

    Article  CAS  Google Scholar 

  27. W.J. Fan, M.F. Li, T.C. Chong and J.B. Xia, J. Appl. Phys., 79, 188, (1996).

    Article  CAS  Google Scholar 

  28. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys., Part 2, 34, L797, (1995).

    Article  CAS  Google Scholar 

  29. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama, Appl. Phys. Lett., 67, 1868, (1995).

    Article  CAS  Google Scholar 

  30. M. Kneissl, D.P. Bour, N.M. Johnson, L.T. Romano, B.S. Krusor, R. Donaldson, J. Walker and C. Dunnrowicz, Appl. Phys. Lett., 72, 1539, (1998).

    Article  CAS  Google Scholar 

  31. T.-H. Yu and K.F. Brennan, J. Appl. Phys., 89, 3827, (2001).

    Article  CAS  Google Scholar 

  32. T. Wang, H. Saeki, J. Bai, T. Shirahama, M. Lachab and S. Sakai, Appl. Phys. Lett., 76, 1737, (2000).

    Article  CAS  Google Scholar 

  33. N. Maeda, T. Saitoh, K. Tsubaki, T. Nishida and N. Kobayashi, Phys. Stat. Sol. (b), 216, 727, (1999).

    Article  CAS  Google Scholar 

  34. C.X. Wang, K. Tsubaki, N. Kobayashi, T Makimoto and N. Maeda, Appl. Phys. Lett, 84, 2313, (2004).

    Article  CAS  Google Scholar 

  35. N. Okamoto, K. Hoshino, N. Hara, M. Takikawa and Y. Arakawa, Journal of Crystal Growth, 272, 278, (2004).

    Article  CAS  Google Scholar 

  36. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices, Artech House, Japan, (1993).

    Google Scholar 

  37. Z. Yarar, B. Ozdemir and M. Ozdemir, Phys. Stat. Sol. (b) 242, 2872, (2005).

    Article  CAS  Google Scholar 

  38. Z. Yarar, B. Ozdemir and M. Ozdemir, Eur. Phys. J. B, 49, 407, (2006).

    Article  CAS  Google Scholar 

  39. N. Maeda, T. Nishida, N. Kobayashi and M. Tomizawa, Appl. Phys. Lett., 73, 1856, (1998).

    Article  CAS  Google Scholar 

  40. M. Goano, E. Bellotti, E. Ghillino, C. Garetto, G. Ghione, K. F. Brennan, J. Appl. Phys., 88, 6476, (2000).

    Article  CAS  Google Scholar 

  41. S.F. Chichibu, A.C. Abare, M.S. Minsky, S. Keller, S.B. Fleischer, J.E. Bowers, E. Hu, U.K. Mishra, L.A. Coldren and S.P. Denbaars, Appl. Phys. Lett., 73, 2006, (1998).

    Article  CAS  Google Scholar 

  42. A.M. Yong, C.B. Soh, X.H. Zhang, S.Y. Chow and S.J. Chua, Thin Solid Films, 515, 4496, (2007).

    Article  CAS  Google Scholar 

  43. I.-H. Kim, H.-S. Park, Y.-J. Park and T. Kim, Appl. Phys. Lett., 73, 1634, (1998).

    Article  CAS  Google Scholar 

  44. S. Pereira, M.R. Correia, E. Pereira, K.P. O’Donnell, E. Alves, A.D. Sequeira, N. Franco, I.M. Watson and C.J. Deatcher, Appl. Phys. Lett., 80, 3913, (2002).

    Article  CAS  Google Scholar 

  45. S. Pereira, M.R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K.P. O’Donnell, E. Alves, N. Franco, A.D. Sequeira, Appl. Phys. Lett., 81, 1207, (2002).

    Article  CAS  Google Scholar 

  46. W. Lü, D.B. Li, C.R. Li, F. Shen and Z. Zhang, J. Appl. Phys., 95, 4362 (2004).

    Article  Google Scholar 

  47. P.M.F.J. Costa, R. Datta, M.J. Kappers, M.E. Vickers, C.J. Humphreys, D.M. Graham, P. Dawson, M.J. Godfrey, E.J. Thrush and J.T. Mullins, Phys. Stat. Sol. (a), 203, 1729, (2006).

    Article  CAS  Google Scholar 

  48. Y.-M. Hsin, H.-T. Hsu, C.-C. Chuo and J.-I. Chyi, IEEE Electron Device Letters, 22, 501, (2001).

    Article  CAS  Google Scholar 

  49. S.-Y. Chiu, A.F.M. Anwar and S. Wu, MRS Internet J. Nitride Semicond. Res. 4S1, G6.7 (1999)

  50. S.-Y. Chiu, A.F.M. Anwar and S. Wu, IEEE Transactions on Electron Devices, 47, 662, (2000).

    Article  CAS  Google Scholar 

  51. S.K. Islam, F.C. Jain, G. Zhao and E. Heller, International Journal of Infrared and Millimeter Waves, 19, 1633, (1998).

    Article  CAS  Google Scholar 

  52. S.K. Islam and F.C. Jain, International Journal of Infrared and Millimeter Waves, 22, 1495, (2001).

    Article  CAS  Google Scholar 

  53. W. Walukiewicz, H.E. Ruda, J. Lagowski and H.C. Gatos, Phys. Rev. B, 30, 4571, (1984).

    Article  CAS  Google Scholar 

  54. K. Yokoyama and K. Hess, Phys. Rev. B, 33, 5595, (1986).

    Article  CAS  Google Scholar 

  55. P. Harrison, Quantum Wells, Wires and Dots, Jonh-Wiley Sons. Ltd., England, (2000).

    Google Scholar 

  56. T. Ando, A.B. Fowler and F. Stern, Rev. Mod. Phys., 54, 437, (1982).

    Article  CAS  Google Scholar 

  57. T. Ando, J. Phys. Soc. Jap., 51, 3900, (1982).

    Article  CAS  Google Scholar 

  58. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka and T. Matsusue, Appl. Phys. Lett., 51, 1934, (1987).

    Article  CAS  Google Scholar 

  59. S. Yamakawa, H. Ueno, K. Taniguchi and C. Hamaguchi, K. Miyatsuji, K. Masaki, U. Ravaioli, J. Appl. Phys., 79, 911, (1996).

    Article  CAS  Google Scholar 

  60. F. Gamiz, J.B. Roldan, J.A. Lopez-Villanueva, P. Cartujo-Cassinello and J. E. Carceller, J. Appl. Phys., 86, 6854, (1999).

    Article  CAS  Google Scholar 

  61. O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, J. Appl. Phys., 85, 3222, (1999).

    Article  CAS  Google Scholar 

  62. B.K. Ridley, Quantum Processes in Semiconductors, Oxford, Clarendon, (1982).

    Google Scholar 

  63. M. Lundstrom, Fundamentals of Carrier Transport New York (Cambridge University Press, 2000)

  64. V.W.L. Chin, T.L. Tansley and T. Osotchan, J. Appl. Phys., 75, 7365, (1994).

    Article  CAS  Google Scholar 

  65. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff and L. F. Eastman, J. Appl. Phys., 87, 334, (2000).

    Article  CAS  Google Scholar 

  66. http://www.ioffe.rssi.ru/SVA/NSM/Semicond/GaN/basic.html; http://nina.ecse.rpi.edu/shur/nitride.htm#Lei

  67. J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, P.P. Ruden and Y. Wang, J. Appl. Phys., 78, 1033, (1995).

    Article  CAS  Google Scholar 

  68. U.V. Bhapkar and M.S. Shur, J. Appl. Phys., 82, 1649, (1997).

    Article  CAS  Google Scholar 

  69. S.K. O’Leary, B.E. Foutz, M.S. Shur, U.V. Bhapkar and F. Eastman, J. Appl. Phys., 83, 826 (1998).

    Article  CAS  Google Scholar 

  70. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand and K.F. Brennan, J. Appl. Phys., 83, 1446, (1998).

    Article  CAS  Google Scholar 

  71. J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand and K. F. Brennan, J. Appl. Phys., 83, 4777, (1998).

    Article  CAS  Google Scholar 

  72. S.K. O’Leary, B.E. Foutz, M.S. Shur, U.V. Bhapkar and L.F. Eastman, Solid State Communications, 105, 621, (1998).

    Article  CAS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, Faculty of Arts and Sciences, Mersin University, Çiftlikköy, 33343, Mersin, Turkey

    Z. Yarar

  2. Department of Physics, Cukurova University, Adana, 01330, Turkey

    B. Ozdemir & M. Ozdemir

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  1. Z. Yarar
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  2. B. Ozdemir
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Yarar, Z., Ozdemir, B. & Ozdemir, M. Transport and Mobility Properties of Bulk Indium Nitride (InN) and a Two-Dimensional Electron Gas in an InGaN/GaN Quantum Well. J. Electron. Mater. 36, 1303–1312 (2007). https://doi.org/10.1007/s11664-007-0210-9

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