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Improving the Reliability of Si Die Attachment with Zn-Sn-Based High-Temperature Pb-Free Solder Using a TiN Diffusion Barrier

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Abstract

The thermal fatigue reliability of Si die-attached joints with Zn-30wt.%Sn, high-temperature, Pb-free solder was investigated, focusing on the interfacial microstructure and joining strength of a Cu/solder/Cu joint during thermal cycling. A sound die attachment on an aluminum nitride (AlN) direct-bonded copper (DBC) substrate was achieved by forming Cu-Zn intermetallic compound (IMC) layers at the interface with the Cu of the substrate. During the thermal cycling test performed between −40°C and 125°C, thermal fatigue cracks were induced by the growth of Cu-Zn IMCs at the interface with the Cu. A␣thin titanium nitride (TiN) film was applied to suppress the formation of Cu-Zn IMCs. Adequate joint formation was accomplished by using an Au/TiN-coated DBC substrate, and only the TiN layer was observed at both interfaces. In conjunction with the TiN diffusion barrier, the Si die-attached joint created with Zn-30wt.%Sn solder exhibited a stable interfacial microstructure during thermal cycling. No microstructural changes, such as IMC formation, grain growth or formation of fatigue cracks, were observed, and the joining strength was maintained even after 2000 cycles.

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Authors and Affiliations

  1. Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan

    Seongjun Kim, Keun-Soo Kim, Sun-Sik Kim & Katsuaki Suganuma

  2. Manufacturing Engineering Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo, Japan

    Goro Izuta

Authors
  1. Seongjun Kim
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  2. Keun-Soo Kim
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  3. Sun-Sik Kim
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  4. Katsuaki Suganuma
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  5. Goro Izuta
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Correspondence to Seongjun Kim.

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Kim, S., Kim, KS., Kim, SS. et al. Improving the Reliability of Si Die Attachment with Zn-Sn-Based High-Temperature Pb-Free Solder Using a TiN Diffusion Barrier. J. Electron. Mater. 38, 2668–2675 (2009). https://doi.org/10.1007/s11664-009-0928-7

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  • DOI: https://doi.org/10.1007/s11664-009-0928-7

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