Nanometer-thick amorphous boron (α-B) layers were formed on (100) Si during exposure to diborane (B2H6) in a chemical vapor deposition (CVD) system, either at atmospheric or reduced pressures, at temperatures down to 500°C. The dependence of the growth mechanism on processing parameters was investigated by analytical techniques, such as transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), in conjunction with extensive electrical characterization. In particular, devices fabricated by B deposition effectively demonstrated that p + doping of the silicon substrate can be achieved within 10 nm from the surface in a manner that is finely controlled by the B2H6 exposure conditions. High-quality, extremely ultrashallow, p + n junctions were fabricated, and their saturation current was tuned from high Schottky-like values to low deep pn junction-like values by the increasing of the deposited B layer thickness. This junction formation exhibited high selectivity, isotropy, spatial homogeneity, and compatibility with standard Si device fabrication.
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Acknowledgements
The authors would like to thank the staff of the Delft Institute of Microsystems and Nanoelectronics–Integrated Circuit Processing (DIMES-ICP) cleanrooms and measurement room for their support in the fabrication and measurement of the experimental material. This work was performed in cooperation with the SmartMix Merging Electronics and Micro- and Nano-Photonics in Integrated Systems (MEMPHIS) project and the Technology Foundation STW Thin Film Nanomanufacturing (STW TFN) program.
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Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
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Sarubbi, F., Scholtes, T.L.M. & Nanver, L.K. Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p + n Junction Formation. J. Electron. Mater. 39, 162–173 (2010). https://doi.org/10.1007/s11664-009-1018-6
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DOI: https://doi.org/10.1007/s11664-009-1018-6