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Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

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Abstract

This paper presents fabrication and characterization of a quantum dot-based floating gate nonvolatile memory device with site-specific self-assembly of germanium oxide-cladded germanium (GeO x -Ge) quantum dots on SiO2 and ZnS/ZnMgS/ZnS (II–VI lattice-matched high-κ dielectric) tunnel insulator material. These monodispersed and individually cladded quantum dots have the potential to store charge uniformly in the floating gate and are well suited for nonvolatile memory applications.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Connecticut, 371 Fairfield Way, Storrs, CT, 06269-2157, USA

    M. Gogna, E. Suarez, P.-Y. Chan, F. Al-Amoody, S. Karmakar & F. Jain

Authors
  1. M. Gogna
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  2. E. Suarez
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  3. P.-Y. Chan
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  4. F. Al-Amoody
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  5. S. Karmakar
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  6. F. Jain
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Correspondence to M. Gogna.

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Gogna, M., Suarez, E., Chan, PY. et al. Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator. J. Electron. Mater. 40, 1769–1774 (2011). https://doi.org/10.1007/s11664-011-1685-y

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  • DOI: https://doi.org/10.1007/s11664-011-1685-y

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