Abstract
Antimony and tellurium were deposited on BK7 glass using direct-current magnetron and radiofrequency magnetron cosputtering. Antimony telluride thermoelectric thin films were synthesized with a heated substrate. The effects of substrate temperature on the structure, surface morphology, and thermoelectric properties of the thin films were investigated. X-ray diffraction patterns revealed that the thin films were well crystallized. c-Axis preferred orientation was observed in thin films deposited above 250°C. Scanning electron microscopy images showed hexagonal crystallites and crystal grains of around 500 nm in thin film fabricated at 250°C. Energy-dispersive spectroscopy indicated that a temperature of 250°C resulted in stoichiometric Sb2Te3. Sb2Te3 thin film deposited at room temperature exhibited the maximum Seebeck coefficient of 190 μV/K and the lowest power factor (PF), S 2 σ, of 8.75 × 10−5 W/mK2. When the substrate temperature was 250°C, the PF increased to its highest value of 3.26 × 10−3 W/mK2. The electrical conductivity and Seebeck coefficient of the thin film were 2.66 × 105 S/m and 113 μV/K, respectively.
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Chen, T., Fan, P., Zheng, Z. et al. Influence of Substrate Temperature on Structural and Thermoelectric Properties of Antimony Telluride Thin Films Fabricated by RF and DC Cosputtering. J. Electron. Mater. 41, 679–683 (2012). https://doi.org/10.1007/s11664-011-1896-2
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DOI: https://doi.org/10.1007/s11664-011-1896-2