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Synthesis of Ge1−x Sn x Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM)

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Abstract

Ge1−x Sn x thin films are interesting for all-group-IV optoelectronics because of a crossover to a direct bandgap with dilute Sn alloying. However, Sn has vanishing room-temperature equilibrium solubility in Ge, making their synthesis very challenging. Herein, we report on our attempts to synthesize Ge1−x Sn x films on Ge (001) using ion implantation and pulsed laser melting (II-PLM). A maximum of 2 at.% Sn was incorporated with our experimental conditions in the samples as determined by Rutherford back scattering spectroscopy. A red-shift in the Ge optical phonon branch and increased absorption below the Ge bandgap with increasing Sn concentration indicate Sn-induced lattice- and band-structure changes after II-PLM. However, ion-channeling and electron microscopy show that the films are not of sufficient epitaxial quality for use in devices.

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Authors and Affiliations

  1. Materials Science and Engineering, University of Utah, Salt Lake City, UT, 84112, USA

    A. Bhatia, W.M. Hlaing Oo, G. Siegel & M.A. Scarpulla

  2. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    P.R. Stone & K.M. Yu

  3. Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, 84112, USA

    M.A. Scarpulla

Authors
  1. A. Bhatia
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  2. W.M. Hlaing Oo
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  3. G. Siegel
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  4. P.R. Stone
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  5. K.M. Yu
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  6. M.A. Scarpulla
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Correspondence to A. Bhatia.

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Bhatia, A., Hlaing Oo, W., Siegel, G. et al. Synthesis of Ge1−x Sn x Alloy Thin Films Using Ion Implantation and Pulsed Laser Melting (II-PLM). J. Electron. Mater. 41, 837–844 (2012). https://doi.org/10.1007/s11664-012-2011-z

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