Abstract
In this study, the thermoelectric properties for polycrystalline In4−x Ce x Pb0.01Se3 (x = 0.03, 0.06, 0.08, 0.1) compounds are investigated. Theoretical and experimental study reveal that the Ce/Pb co-doping at the In sites is an effective way to simultaneously decrease the thermal conductivity and increase the electric conductivity (Ahn et al. in Appl Phys Lett 99:102, 2011). As a heavy atom, Ce can effectively scatter phonons which reduces the thermal conductivity. Meanwhile, the Pb atom serving as electron donor provides additional electrons in the doped compounds. Therefore, the reduced thermal conductivity along with the boosted power factor give rise to an improvement of the dimensionless figure-of-merit, ZT, of over 65% in In4−x Ce x Pb0.01Se3 (x = 0.06) compounds as compared with pure In4Se3.
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Acknowledgements
This work was financially supported in part by the National Natural Science Foundation of China (Grant Nos. 11404044, 51472036). The work conducted at the Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences is supported by the 100 Talent Program of the Chinese Academy of Sciences (Grant No. 2013-46) and the National Natural Science Foundation of China (Grant No. 11344010).
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Zhan, H., Peng, K., Alsharafi, R. et al. Thermoelectric Properties of Ce/Pb Co-doped Polycrystalline In4−x Ce x Pb0.01Se3 Compounds. J. Electron. Mater. 46, 3215–3220 (2017). https://doi.org/10.1007/s11664-016-4920-8
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DOI: https://doi.org/10.1007/s11664-016-4920-8