Abstract
Properties of HgCdTe films grown by molecular beam epitaxy on GaAs and Si substrates have been studied by performing variable-temperature photoluminescence (PL) measurements. A substantial difference in defect structure between films grown on GaAs (013) and Si (013) substrates was revealed. HgCdTe/GaAs films were mostly free of defect-related energy levels within the bandgap, which was confirmed by PL and carrier lifetime measurements. By contrast, the properties of HgCdTe/Si films are affected by uncontrolled point defects. These could not be always associated with typical “intrinsic” HgCdTe defects, such as mercury vacancies, so consideration of other defects, possibly inherent in HgCdTe/Si structures, was required. The post-growth annealing was found to have a positive effect on the defect structure by reducing the full-widths at half-maximum of excitonic PL lines for both types of films and lowering the concentration of defects specific to HgCdTe/Si.
Similar content being viewed by others
References
W. Lei, J. Antoszewski, and L. Faraone, Appl. Phys. Rev. 2, 041303 (2015).
M. Kinch, J. Electron. Mater. 44, 2969 (2015).
P. Martyniuk, J. Antoszewski, M. Martyniuk, L. Faraone, and A. Rogalski, Appl. Phys. Rev. 1, 041102 (2014).
J.D. Benson, L.O. Bubulac, M. Jaime-Vasquez, J.M. Arias, P.J. Smith, R.N. Jacobs, J.K. Markunas, L.A. Almeida, A. Stoltz, P.S. Wijewarnasuriya, J. Peterson, M. Reddy, K. Jones, S.M. Johnson, and D.D. Lofgreen, J. Electron. Mater. 46, 5018 (2017).
M. Vaghayenegar, R.N. Jacobs, J.D. Benson, A.J. Stoltz, L.A. Almeida, and D.J. Smith, J. Electron. Mater. 46, 5007 (2017).
Yu. Sidorov, I. Loshkarev, I. Sabinina, E. Trukhanov, V. Varavin, M. Yakushev, and A. Kolesnikov, Phys. Stat. Sol. C 13, 425 (2016).
I.I. Izhnin, K.D. Mynbaev, A.V. Voitsekhovsky, A.G. Korotaev, O.I. Fitsych, M. Pociask-Bialy, and S.A. Dvoretsky, Opto-Electron. Rev. 23, 200 (2015).
K.D. Mynbaev, N.L. Bazhenov, V.I. Ivanov-Omski, N.N. Mikhailov, M.V. Yakushev, A.V. Sorochkin, S.A. Dvoretsky, V.S. Varavin, and Yu.G. Sidorov, Semiconductors 45, 872 (2011).
M.V. Yakushev, K.D. Mynbaev, N.L. Bazhenov, V.S. Varavin, N.N. Mikhailov, D.V. Marin, S.A. Dvoretsky, and Yu.G. Sidorov, Phys. Status Solidi C 13, 469 (2016).
S. Simingalam, B.L. VanMil, Y.P. Chen, E.A. DeCuir, G.P. Meissner, P. Wijewarnasuriya, N.K. Dhar, and M.V. Rao, Sol. State Electron. 101, 90 (2014).
O. Gravrand, J. Rothman, C. Cervera, N. Baier, C. Lobre, J.P. Zanatta, O. Boulade, V. Moreau, and B. Fieque, J. Electron. Mater. 45, 4532 (2016).
V.M. Bazovkin, S.A. Dvoretsky, A.A. Guzev, A.P. Kovchavtsev, D.V. Marin, V.G. Polovinkin, I.V. Sabinina, G.Y. Sidorov, A.V. Tsarenko, V.V. Vasil’ev, V.S. Varavin, and M.V. Yakushev, Infrared Phys. Technol. 76, 72 (2016).
H. Wen and E. Belotti, J. Appl. Phys. 119, 205702 (2016).
V.S. Varavin, V.V. Vasiliev, S.A. Dvoretsky, N.N. Mikhailov, V.N. Ovsyuk, Y.G. Sidorov, A.O. Suslyakov, M.V. Yakushev, and A.L. Aseev, Opto-Electron. Rev. 11, 99 (2003).
D. Ouadjaout, Y. Marfaing, A. Lusson, and A. Heurtel, J. Cryst. Growth 101, 709 (1990).
A.V. Shilyaev, K.D. Mynbaev, N.L. Bazhenov, and A.A. Greshnov, Tech. Phys. 87, 419 (2017).
M.M. Kraus, C.R. Becker, S. Scholl, Y.S. Wu, S. Yann, and G. Landwehr, Semicond. Sci. Technol. 8, S62 (1993).
S.A. Kazazis, E. Papadomanolaki, M. Androulidaki, M. Kayambaki, and E. Iliopoulos, J. Appl. Phys. 123, 125101 (2018).
I.C. Robin, M. Taupin, R. Derone, A. Sollignac, P. Ballet, and A. Lusson, Appl. Phys. Lett. 95, 202104 (2009).
H. Wang, J. Hong, F. Yue, C. Jing, and J. Chu, Infrared Phys. Technol. 82, 1 (2017).
S.V. Morozov, V.V. Rumyantsev, A.V. Antonov, K.V. Maremyanin, K.E. Kudryavtsev, L.V. Krasilnikova, N.N. Mikhailov, S.A. Dvoretskii, and V.I. Gavrilenko, Appl. Phys. Lett. 104, 072102 (2014).
B. Delacourt, P. Ballet, F. Boulard, A. Ferron, L. Bonnefond, T. Pellerin, A. Kerlain, V. Destefanis, and J. Rothman, J. Electron. Mater. 46, 6817 (2017).
M.A. Kinch, F. Aqariden, D. Chandra, P.K. Liao, H.F. Schaake, and H.D. Shih, J. Electron. Mater. 34, 880 (2005).
S.V. Zablotsky, N.L. Bazhenov, K.D. Mynbaev, M.V. Yakushev, D.V. Marin, V.S. Varavin, and S.A. Dvoretsky, J. Phys Conf. Ser. 643, 012004 (2015).
M.V. Yakushev, A.K. Gutakovsky, I.V. Sabinina, and Yu.G. Sidorov, Semiconductors 45, 926 (2011).
L. Bubulac, J. Benson, R. Jacobs, A. Stoltz, M. Jaime-Vasquez, L.A. Almeida, A. Wang, L. Wang, R. Hellmer, T. Golding, J.H. Dinan, M. Carmody, P.S. Wijewarnasuriya, M.F. Lee, M.F. Vilela, J. Peterson, S.M. Johnson, D.F. Lofgreen, and D. Rhiger, J. Electron. Mater. 40, 280 (2011).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Conflict of interest
The authors declare that they have no conflict of interests.
Rights and permissions
About this article
Cite this article
Mynbaev, K.D., Bazhenov, N.L., Dvoretsky, S.A. et al. Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies. J. Electron. Mater. 47, 4731–4736 (2018). https://doi.org/10.1007/s11664-018-6364-9
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-018-6364-9