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SnTexSe1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications

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Abstract

As prepared by fusion, SnTexSe1−x (x = 0.68) alloy is found to possess mixed phases of hexagonal Te and orthorhombic SnSe. The deposited films of this alloy demonstrate incongruent evaporation of the constituents. Reductions in c-parameter and strain along the z-axis in lattices of SnSe and Te constituents have been observed in these films at 353 K. These deviations in the structure of SnTexSe1−x films make it superior to SnSe for various optoelectronic applications. The absorption coefficient of SnTexSe1−x films is higher than SnSe, and its bandgap attains a value of 0.93 eV. Further, resistivity value of SnTexSe1−x (∼ 6.12 × 10−2 Ω cm) is lower and carrier concentration (∼ 1.31 × 1019 cm−3) is higher than SnSe, whereas its mobility value (∼ 25.8 cm2/V s) matches SnSe and similar materials. The surface quality of SnTexSe1−x improves and number of crystallites increases. The interface of p-SnTexSe1−x with Ag metal forms a Schottky diode. The current–voltage (I–V) behaviour of Ag/p-SnTexSe1−x Schottky diodes is analysed and diode parameters are determined by using thermionic emission and diffusion (TED) current transport mechanism.

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Authors and Affiliations

  1. Department of Physics, University of Jammu, Jammu, J&K, 180006, India

    Anjali Devi, Arun Banotra & Naresh Padha

  2. Solid State Physics Laboratory, DRDO, Timarpur, New Delhi, 110054, India

    Shiv Kumar & Ashok K. Kapoor

Authors
  1. Anjali Devi
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  2. Arun Banotra
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  3. Shiv Kumar
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  4. Ashok K. Kapoor
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  5. Naresh Padha
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Correspondence to Naresh Padha.

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Devi, A., Banotra, A., Kumar, S. et al. SnTexSe1−x Alloy: An Effective Alternative to SnSe Nano-crystalline Thin Films for Optoelectronic Applications. J. Electron. Mater. 48, 4335–4341 (2019). https://doi.org/10.1007/s11664-019-07202-w

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