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Optimization of Titanium Nitride Film for High Power RF MEMS Applications

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Abstract

In this paper, TiN film has been deposited and optimized at room temperature for high power radio-frequency microelectromechanical system (RF-MEMS) applications. Being hard, titanium nitride is used in the contact area. The contact material should have low resistance and high hardness. TiN thin films were deposited by DC magnetron reactive sputtering using a four inch high purity titanium target in a nitrogen (N2) environment. X-ray diffraction (XRD) analysis is used to confirm crystal structure and purity of TiN film. The effect of various N2 pressure on resistivity and hardness of TiN thin film is investigated. The resistivity of the film decreases and hardness increases with N2 pressure.

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Acknowledgments

The authors would like to thanks CSIR-CEERI, Pilani for providing financial support under MLP-105. The authors would also like to thanks Prof. Anshuman Dalvi from BITS Pilani for XRD results.

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Authors and Affiliations

  1. CSIR- Central Electronics Engineering Research Institute, Pilani, 333031, India

    Prem Kumar, Deepak Bansal,  Anuroop, Khushbu Mehta, Amit Kumar & Kamaljit Rangra

  2. Malaviya National Institute of Technology, Jaipur, 302017, India

    Prem Kumar & Dharmendar Boolchandani

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  1. Prem Kumar
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  2. Deepak Bansal
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  3. Anuroop
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  4. Khushbu Mehta
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Correspondence to Prem Kumar.

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Kumar, P., Bansal, D., Anuroop et al. Optimization of Titanium Nitride Film for High Power RF MEMS Applications. J. Electron. Mater. 48, 6431–6436 (2019). https://doi.org/10.1007/s11664-019-07435-9

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