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Ultra-shallow P+/N junctions formed by recoil implantation

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Abstract

The concept of recoil implantation is proposed to facilitate fabrication of ultrashallow p+/n junctions. In this method, a thin boron film is first deposited onto the Si wafer surface. Then the boron atoms are knocked into the Si substrate by Ge implantation or Ar plasma source ion implantation. Dopant activation and damage removal are achieved via rapid thermal annealing. Preliminary results show the realization of sub-100 nm deep p+/n junctions with this technique. Monte Carlo simulations were performed to predict the recoiled boron profiles, and agree well with the experimental results.

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References

  1. S.M. Sze, Physics of Semiconductor Devices, 2nd Ed., (New York: John Wiley & Sons, 1981).

    Google Scholar 

  2. The National Technology Roadmap for Semiconductors, (Semiconductor Industry Association, 1994).

  3. S.N. Hong, G.A. Ruggles, J.J. Wortman, E.R. Myers and J.J. Hren, IEEE Trans. Electron Dev. 38, 28 (1991).

    Article  CAS  Google Scholar 

  4. W. Zagozdzon-Wosik, P.B. Grabiec and G. Lux, IEEE Trans. Electron Dev. 41, 2281 (1994).

    Article  CAS  Google Scholar 

  5. K.J. Kramer, S. Talwar, A.M. McCarthy and K.H. Weiner, IEEE Electron Device Lett. 17, 461 (1996).

    Article  CAS  Google Scholar 

  6. E.C. Jones and N.W. Cheung, IEEE Electron Dev. Lett. 14, 444 (1993).

    Article  CAS  Google Scholar 

  7. E.C. Jones, W. En, S. Ogawa, D.B. Fraser and N.W. Cheung, J. Vac. Sci. Technol. B 12, 956 (1994).

    Article  CAS  Google Scholar 

  8. S.N. Hong, G.A. Ruggles, J.J. Wortman and M.C. Ozturk, IEEE Trans. Electron Dev. 38, 476, (1991).

    Article  CAS  Google Scholar 

  9. A. Grob, J.J. Grob, N. Mesli, D. Salles and P. Siffert, Nucl. Instrum. Methods Phys. Res. B 182/183, 85 (1981).

    Article  Google Scholar 

  10. M. Bruel, M. Floccari and J.P. Gailliard, Nucl. Instrum. Methods Phys. Res. B 182/183, 93 (1981).

    Article  Google Scholar 

  11. S. Han, Ph.D. Thesis, University of Wisconsin-Madison, (1988).

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Authors and Affiliations

  1. Engineering Research Center for Plasma-Aided Manufacturing, University of Wisconsin-Madison, 1410 Engineering Drive, Room 101, 53706-1608, Madison, WI

    Henley L. Liu, Steven S. Gearhart, John H. Booske & Wei Wang

Authors
  1. Henley L. Liu
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  2. Steven S. Gearhart
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  3. John H. Booske
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  4. Wei Wang
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Liu, H.L., Gearhart, S.S., Booske, J.H. et al. Ultra-shallow P+/N junctions formed by recoil implantation. J. Electron. Mater. 27, 1027–1029 (1998). https://doi.org/10.1007/s11664-998-0157-5

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  • DOI: https://doi.org/10.1007/s11664-998-0157-5

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