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Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes

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Abstract

Aluminum (Al) and boron (B) ion implantations at room temperature into n-type 6H-SiC epilayers have been investigated. Rutherford backscattering spectroscopy (RBS) channeling measurements revealed larger lattice damage in Al+ implantation at a given total implantation dose. A nearly perfect electrical activation ratio (>90%) could be attained by high-temperature annealing at 1600°C for Al+ and 1700°C for B+ implantations. Mesa pn junction diodes formed by either Al+ or B+ implantation with a 1×1014 cm−2 dose exhibited high blocking voltages of 950∼1070 V, which are 80∼90% of the ideal value predicted for the diode structure. The forward current can clearly be divided into two components of diffusion and recombination currents. B+-implanted diodes showed higher breakdown voltage on average but poor forward conduction. Comparison of the performance of Al+ and B+-implanted diodes is discussed.

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Authors and Affiliations

  1. Department of Electronic Science & Engineering, Kyoto University, 606-01, Sakyo, Kyoto, Japan

    T. Kimoto, O. Takemura & H. Matsunami

  2. Ion Engineering Research Institute, Corporation, Tsuda, 573-01, Hirakata, Osaka, Japan

    T. Nakata & M. Inoue

Authors
  1. T. Kimoto
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  2. O. Takemura
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  3. H. Matsunami
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  4. T. Nakata
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  5. M. Inoue
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Kimoto, T., Takemura, O., Matsunami, H. et al. Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes. J. Electron. Mater. 27, 358–364 (1998). https://doi.org/10.1007/s11664-998-0415-6

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  • DOI: https://doi.org/10.1007/s11664-998-0415-6

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