Abstract
Gallium nitride (GaN) thin films grown on sapphire substrates were successfully bonded and transferred onto GaAs, Si, and polymer “receptor” substrates using a low-temperature Pd-In bond followed by a laser lift-off (LLO) process to remove the sapphire growth substrate. The GaN/sapphire structures were joined to the receptor substrate by pressure bonding a Pd-In bilayer coated GaN surface onto a Pd coated receptor substrate at a temperature of 200°C. X-ray diffraction showed that the intermetallic compound PdIn3 had formed during the bonding process. LLO, using a single 600 mJ/cm2, 38 ns KrF (248 nm) excimer laser pulse directed through the transparent sapphire substrate, followed by a low-temperature heat treatment, completed the transfer of the GaN onto the “receptor” substrate. Cross-sectional scanning electron microscopy and x-ray rocking curves showed that the film quality did not degrade significantly during the bonding and LLO process.
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Wong, W.S., Wengrow, A.B., Cho, Y. et al. Integration of GaN thin films with dissimilar substrate materials by Pd-In metal bonding and laser lift-off. J. Electron. Mater. 28, 1409–1413 (1999). https://doi.org/10.1007/s11664-999-0131-x
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DOI: https://doi.org/10.1007/s11664-999-0131-x