Abstract
Undoped and Sn-doped (1, 1.5 and 2 at.%) indium oxide (In2O3) thin films have been grown by the chemical spray pyrolysis technique on cleaned glass substrates using indium nitrate [In(NO3)3] and stannic tetrachloride hydrated (SnCl4·5H2O) as the host and dopant precursors, respectively, and deionized water as the solvent. Structural characterization using x-ray diffraction reveals that the films possess cubic structure, with the average crystallite size in the range 10-14 nm. The surface morphology and roughness of the films have been investigated by means of an atomic force microscope. UV-Vis measurements indicate an enhancement in the optical transmittance in the visible region on Sn doping. Further, the doping effect has been found to substantially reduce the electrical resistance to a few orders of magnitude of the undoped In2O3 film. We report a simultaneous improvement in both the optical and electrical properties of indium oxide thin film due to the doping of Sn ions. These results indicate that Sn-doped In2O3 thin film can be a potential candidate for use in various optoelectronic devices. Among all the films examined, the 1 at.% Sn-doped film shows the maximum response (~91%) at 300 °C for 80 ppm concentration of formaldehyde in air.
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Acknowledgments
The authors are grateful to the Institute Instrumentation Centre, Indian Institute of Technology, Roorkee, India, for providing XRD and AFM facilities. Financial support provided by the University Grants Commission, New Delhi, India, in the form of a major research project (No. 40-450/2011 (SR)) is gratefully acknowledged.
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Pramod, N.G., Pandey, S.N. & Sahay, P.P. Sn-Doped In2O3 Nanocrystalline Thin Films Deposited by Spray Pyrolysis: Microstructural, Optical, Electrical, and Formaldehyde-Sensing Characteristics. J Therm Spray Tech 22, 1035–1043 (2013). https://doi.org/10.1007/s11666-013-9933-8
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DOI: https://doi.org/10.1007/s11666-013-9933-8