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Copper interconnects for semiconductor devices

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Abstract

Copper/low-k dielectric materials have been rapidly replacing conventional aluminum-alloy/SiO2-based interconnects in today’s semiconductor devices. This paper reviews the advantages of transitioning to copper/low-k interconnects. Materials and process challenges during the fabrication of devices with copper/low-k interconnects are discussed. Reliability concerns associated with such devices are highlighted.

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Authors and Affiliations

  1. Agere Systems, Orlando, Florida

    Sailesh M. Merchant & Seung H. Kang

  2. Novellus Systems, San Jose, California

    Mahesh Sanganeria, Bart van Schravendijk & Tom Mountsier

Authors
  1. Sailesh M. Merchant
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  2. Seung H. Kang
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  3. Mahesh Sanganeria
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  4. Bart van Schravendijk
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  5. Tom Mountsier
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Additional information

For more information, contact S.M. Merchant, Agere Systems, Orlando, Florida 32819; (407) 371-7538; agere.com.

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Merchant, S.M., Kang, S.H., Sanganeria, M. et al. Copper interconnects for semiconductor devices. JOM 53, 43–48 (2001). https://doi.org/10.1007/s11837-001-0103-y

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  • DOI: https://doi.org/10.1007/s11837-001-0103-y

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